Wannan kunshin neMOSFETpyroelectric infrared firikwensin. Firam ɗin rectangular ita ce taga mai ji. G fil shine tashar ƙasa, fil ɗin D shine magudanar MOSFET na ciki, kuma S fil shine tushen MOSFET na ciki. A cikin da'irar, G yana haɗa zuwa ƙasa, D yana haɗa da ingantaccen wutar lantarki, siginar infrared ana shigar da ita daga taga, kuma ana fitar da siginar lantarki daga S.
Kofar shari'a G
Direban MOS ya fi taka rawa na gyare-gyaren motsi da haɓaka tuki: Idan siginar G naMOSFETba shi da tsayi sosai, zai haifar da asarar wutar lantarki mai yawa yayin lokacin sauyawa. Tasirinsa shine rage ƙarfin jujjuyawa. MOSFET za ta sami zazzaɓi mai tsanani kuma zafi zai iya lalacewa cikin sauƙi. Akwai takamaiman ƙarfin aiki tsakanin MOSFETGS. , idan ƙarfin tuƙi na siginar G bai isa ba, zai yi tasiri sosai akan lokacin tsallen igiyar ruwa.
Tsaya gunkin GS gajere, zaɓi matakin R × 1 na multimeter, haɗa jagorar gwajin baƙar fata zuwa sandar S, da jan gwajin ja zuwa sandar D. Juriya ya kamata ya zama ƴan Ω zuwa fiye da goma Ω. Idan aka gano cewa juriyar wani fil da fil biyunsa ba su da iyaka, kuma har yanzu ba shi da iyaka bayan sun yi musanyar gwajin gwajin, za a tabbatar da cewa wannan fil ɗin G pole ne, saboda an keɓe shi daga sauran fil biyun.
Ƙayyade tushen S kuma magudana D
Saita multimeter zuwa R × 1k kuma auna juriya tsakanin fil uku bi da bi. Yi amfani da hanyar gwajin musanya don auna juriya sau biyu. Wanda ke da ƙarancin juriya (gaba ɗaya 'yan dubu Ω zuwa fiye da dubu goma Ω) shine juriya na gaba. A wannan lokacin, baƙar fata gubar gwajin ita ce sandar S kuma jan gwajin gwajin yana haɗa da sandar D. Saboda yanayin gwaji daban-daban, ƙimar RDS(on) da aka auna ta fi daidai ƙimar da aka bayar a cikin jagorar.
Game daMOSFET
Transistor yana da tashar N-type don haka ana kiran shi N-channelMOSFET, koNMOS. P-channel MOS (PMOS) FET kuma akwai, wanda PMOSFET ne wanda ya ƙunshi nau'in BACKGATE mai sauƙi mai sauƙi da kuma tushen nau'in P da magudanar ruwa.
Ba tare da la'akari da nau'in N-type ko nau'in P-type MOSFET ba, ƙa'idodin aikinsa iri ɗaya ne. MOSFET tana sarrafa halin yanzu a magudanar tashar fitarwa ta wutar lantarki da ake amfani da shi a ƙofar tashar shigarwar. MOSFET na'ura ce mai sarrafa wutar lantarki. Yana sarrafa halayen na'urar ta hanyar ƙarfin lantarki da ake amfani da shi a ƙofar. Ba ya haifar da tasirin ajiyar caji ta hanyar tushen halin yanzu lokacin da ake amfani da transistor don sauyawa. Saboda haka, a cikin canja wurin aikace-aikace,MOSFETsya kamata ya canza sauri fiye da transistor.
Har ila yau FET ta sami sunanta ne saboda shigar da ita (wanda ake kira gate) yana rinjayar halin yanzu da ke gudana ta hanyar transistor ta hanyar zana filin lantarki a kan wani Layer na insulating. A zahiri, babu wani halin yanzu da ke gudana ta wannan insulator, don haka GATE halin yanzu na bututun FET kadan ne.
FET da aka fi sani da ita tana amfani da siririn siliki na silicon dioxide azaman insulator ƙarƙashin GATE.
Irin wannan transistor ana kiransa transistor karfe oxide semiconductor (MOS), ko, karfe oxide semiconductor field effect transistor (MOSFET). Saboda MOSFETs sun fi ƙanƙanta kuma sun fi ƙarfin ƙarfi, sun maye gurbin transistor a aikace-aikace da yawa.