Menene yankuna huɗu na MOSFET?

Yankuna huɗu na MOSFET na haɓaka tashar N-tashar

(1) Yankin juriya mai canzawa (wanda kuma ake kira yankin unsaturated)

Ucs" Ucs (th) (kunna wutar lantarki), uDs" UGs-Ucs (th), shine yanki zuwa hagu na alamar da aka riga aka kafa a cikin adadi inda aka kunna tashar. Darajar UDs ƙarami ne a wannan yanki, kuma UGs ne kawai ke sarrafa juriya ta tashar. Lokacin da uGs ya tabbata, ip da uDs cikin alaƙar mizani, ana ƙiyasta yankin azaman saitin madaidaiciyar layi. A wannan lokacin, filin tasirin bututu D, S tsakanin daidai da ƙarfin lantarki UGS

Sarrafa ta ƙarfin ƙarfin lantarki UGS juriya mai canzawa.

(2) yanki na yanzu (wanda kuma aka sani da yankin jikewa, yankin haɓakawa, yanki mai aiki)

Ucs ≥ Ucs (h) da Ubs ≥ UcsUssth), don siffa na gefen dama na hanyar da aka riga aka yanke, amma har yanzu ba a rushe ba a cikin yankin, a cikin yankin, lokacin da uGs dole ne, ib kusan bai yi ba. canzawa tare da UDs, halaye ne na yau da kullun. UGs ne kawai ke sarrafa ni, sannan MOSFETD, S daidai yake da ikon sarrafa wutar lantarki uGs na tushen yanzu. Ana amfani da MOSFET a cikin da'irar haɓakawa, gabaɗaya akan aikin MOSFET D, S yayi daidai da ƙarfin wutar lantarki uGs mai sarrafa tushen halin yanzu. MOSFET da aka yi amfani da shi a cikin da'irar haɓakawa, gabaɗaya aiki a yankin, wanda kuma aka sani da yankin haɓakawa.

(3) Wurin yankewa (wanda kuma ake kira yankin yankewa)

Yankin yanki (wanda kuma aka sani da yanki yanke) don saduwa da ucs "Ues (th) don adadi kusa da axis a kwance na yankin, tashar duk an kulle ta, wanda aka sani da cikakken shirin kashewa, io = 0 , tube ba ya aiki.

(4) wurin rushewar yankin

Yankin lalacewa yana cikin yankin a gefen dama na adadi. Tare da karuwar UDs, haɗin PN yana fuskantar jujjuyawar wutar lantarki da raguwa da yawa, ip yana ƙaruwa sosai. Ya kamata a yi amfani da bututun don guje wa aiki a yankin da ya lalace. Za'a iya samun lanƙwan sifa ta hanyar canja wuri daga madaidaicin yanayin fitarwa. A kan hanyar da aka yi amfani da shi azaman jadawali don nemo. Misali, a cikin Hoto na 3 (a) don Ubs = 6V layin tsaye, mahaɗarsa tare da maɓalli daban-daban masu dacewa da i, Us values ​​in ib-Uss coordinates da aka haɗa da lanƙwasa, wato, don samun yanayin yanayin canja wuri.

Ma'auni naMOSFET

Akwai sigogi da yawa na MOSFET, gami da sigogin DC, sigogin AC da sigogi masu iyaka, amma kawai manyan sigogi masu zuwa suna buƙatar damuwa cikin amfani gama gari: cikakken magudanar ruwa-tushen wutar lantarki na IDSS na yanzu na tsinkewa, (bututun nau'in junction da depletion -nau'in bututun da aka keɓe-ƙofa, ko kunna wutar lantarki UT (ƙarfafa bututun ƙofa mai ƙarfi), gm trans-conductance, ɓarna-tushen wutar lantarki BUDS, matsakaicin watsar da wutar lantarki PDSM, da matsakaicin tushen magudanar ruwa na IDSM na yanzu.

(1) Cikakken magudanar ruwa

Cikakkun magudanar ruwa na yanzu IDSS shine magudanar ruwa na yanzu a cikin junction ko nau'in ƙofofin da aka keɓe MOSFET lokacin da ƙarfin ƙarfin ƙofar UGS = 0.

(2) Clip-kashe ƙarfin lantarki

Ƙunƙarar wutar lantarki ta UP ita ce ƙarfin wutar lantarki a cikin nau'in junction-nau'in ko nau'in lalacewa-nau'in kofa MOSFET wanda kawai ya yanke tsakanin magudanar ruwa da tushe. Kamar yadda aka nuna a cikin 4-25 don N-channel tube UGS mai lanƙwasa ID, ana iya fahimtar mahimmancin IDSS da UP.

MOSFET yankuna hudu

(3) Kunna wutar lantarki

Wutar lantarki ta kunna UT ita ce wutar lantarki ta ƙofa a cikin ingantaccen kofa MOSFET wanda ke sa tushen-magudanar ruwa kawai ke gudana.

(4) Canji

Gm transconductance shine ikon sarrafawa na tushen wutar lantarki UGS akan magudanar ID na yanzu, watau, rabon canji a cikin magudanar ruwa na yanzu zuwa canji a cikin ƙarfin wutar lantarki UGS. 9m muhimmin ma'auni ne wanda ke yin la'akari da ƙarfin haɓakawaMOSFET.

(5) Magudanar wutar lantarki ta rushewar tushen

Rarraba tushen wutar lantarki BUDS yana nufin ƙofa tushen ƙarfin wutar lantarki UGS wasu, MOSFET aiki na yau da kullun na iya karɓar matsakaicin magudanar wutar lantarki. Wannan sigar iyaka ce, ƙara zuwa MOSFET ƙarfin aiki dole ne ya zama ƙasa da BUDS.

(6) Matsakaicin Rashin Wutar Lantarki

Matsakaicin watsawar wutar lantarki PDSM shima madaidaicin iyaka ne, yana nufinMOSFETaikin ba ya lalacewa lokacin da madaidaicin madaidaicin madaidaicin madaurin wutar lantarki. Lokacin amfani da MOSFET m ikon amfani ya kamata ya zama ƙasa da PDSM kuma barin wani gefe.

(7) Matsakaicin Ruwa na Yanzu

Matsakaicin yabo IDSM na yanzu shine wani ma'aunin iyaka, yana nufin aiki na yau da kullun na MOSFET, tushen yabo na matsakaicin halin yanzu da aka yarda ya wuce ta MOSFET na yanzu aiki bai kamata ya wuce IDSM ba.

Ƙa'idar Aiki ta MOSFET

Ka'idar aiki na MOSFET (N-channel enhancement MOSFET) shine yin amfani da VGS don sarrafa adadin "cajin inductive", don canza yanayin tashar tashar da aka kafa ta waɗannan "cajin inductive", sannan a cimma manufar. na sarrafa magudanar ruwa. Manufar ita ce sarrafa magudanar ruwa. A cikin kera bututu, ta hanyar yin babban adadin ions masu kyau a cikin rufin insulating, don haka a gefe guda na dubawa ana iya haifar da ƙarin caji mara kyau, ana iya haifar da waɗannan cajin mara kyau.

Lokacin da wutar lantarki ta ƙofar ƙofar ta canza, adadin cajin da aka jawo a tashar shima yana canzawa, faɗin tashar tashar kuma tana canzawa, don haka magudanar ruwa na yanzu yana canzawa tare da ƙarfin ƙofar.

Matsayin MOSFET

I. MOSFET ana iya amfani dashi don haɓakawa. Saboda babban abin shigar da amplifier MOSFET, na'ura mai haɗawa zai iya zama ƙarami, ba tare da amfani da masu ƙarfin lantarki ba.

Na biyu, babban shigar da MOSFET ya dace sosai don jujjuyawar impedance. Yawanci ana amfani da shi a matakin shigar da amplifier da yawa don jujjuyawar impedance.

MOSFET za a iya amfani dashi azaman mai jujjuyawa.

Na hudu, MOSFET ana iya amfani da shi cikin sauƙi azaman tushen tushen yanzu.

Na biyar, MOSFET za a iya amfani da shi azaman wutar lantarki.