(1) Sakamakon sarrafawa na vGS akan ID da tashar
① Case na vGS=0
Ana iya ganin cewa akwai mahaɗar PN guda biyu na baya-baya tsakanin magudanar ruwa d da tushen s na yanayin haɓakawa.MOSFET.
Lokacin da wutar lantarki ta tushen ƙofar vGS = 0, ko da an ƙara vDS mai magudanar ruwa, kuma ba tare da la'akari da polarity na vDS ba, koyaushe akwai haɗin PN a cikin yanayin rashin son rai. Babu wata tashar gudanarwa tsakanin magudanar ruwa da tushen, don haka magudanar ID≈0 na yanzu a wannan lokacin.
② Matsalar vGS>0
Idan vGS> 0, ana samar da filin lantarki a cikin SiO2 mai rufewa Layer tsakanin ƙofar da ma'auni. Jagoran filin lantarki yana tsaye zuwa filin lantarki wanda aka jagoranta daga ƙofar zuwa ƙasa akan saman semiconductor. Wannan filin lantarki yana tunkude ramuka kuma yana jan hankalin electrons. Repelling Ramukan: Ramukan da ke cikin nau'in nau'in P da ke kusa da ƙofar ana tunkuɗe su, suna barin ions masu karɓa (nau'i mara kyau) don samar da Layer na lalacewa. Jan hankali electrons: Electrons (masu ɗaukar nauyi) a cikin nau'in nau'in nau'in nau'in P suna jan hankalin zuwa saman ƙasa.
(2) Samar da tashar gudanarwa:
Lokacin da ƙimar vGS tayi ƙanƙanta kuma ikon jawo hankalin electrons ba shi da ƙarfi, har yanzu babu tashar gudanarwa tsakanin magudanar ruwa da tushen. Yayin da vGS ke ƙaruwa, ƙarin electrons suna jan hankalin zuwa saman Layer na P substrate. Lokacin da vGS ta kai wani ƙima, waɗannan electrons suna samar da nau'in bakin ciki na nau'in N akan saman P substrate kusa da ƙofar kuma an haɗa su zuwa yankunan N+ guda biyu, suna samar da tashar tashar N-type tsakanin magudanar ruwa da tushe. Nau'in tafiyar da aikin sa ya saba wa na P substrate, don haka ana kiransa Layer inversion. Babban vGS shine, mafi ƙarfin filin lantarki da ke aiki akan saman semiconductor shine, yawancin electrons suna jawo hankalin farfajiyar P substrate, mafi girma tashar tashar ta kasance, kuma ƙarami na tashar tashar shine. Ƙofar tushen wutar lantarki lokacin da tashar ta fara farawa ana kiranta wutar lantarki mai kunnawa, wanda VT ke wakilta.
TheN-channel MOSFETAbubuwan da aka tattauna a sama ba za su iya samar da tashar sarrafawa ba lokacin da vGS <VT, kuma bututun yana cikin yanayin yankewa. Lokacin vGS≥VT ne kawai za a iya kafa tasha. Irin wannanMOSFETwanda dole ne ya samar da tashar gudanarwa lokacin da ake kira vGS≥VT yanayin haɓakawaMOSFET. Bayan an kafa tashar, ana samun magudanar ruwa lokacin da aka yi amfani da wutar lantarki ta gaba vDS tsakanin magudanar ruwa da tushe. Tasirin vDS akan ID, lokacin vGS>VT kuma yana da takamaiman ƙima, tasirin wutar lantarki mai tushe vDS akan tashar gudanarwa da ID na yanzu yayi kama da na tasirin filin junction transistor. Ƙarfin wutar lantarki da aka samar ta ID na yanzu na magudanar ruwa tare da tashar yana sanya ƙarfin lantarki tsakanin kowane batu a cikin tashar da ƙofar ba daidai ba. Wutar lantarki a ƙarshen kusa da tushen shine mafi girma, inda tashar ta fi girma. Wutar lantarki a ƙarshen magudanar ruwa shine mafi ƙanƙanta, kuma ƙimarsa shine VGD=vGS-vDS, don haka tashar ita ce mafi ƙanƙanta a nan. Amma lokacin da vDS ƙarami ne (vDS
Lokacin aikawa: Nuwamba-12-2023
