Fahimtar ƙa'idodin aiki na MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor) yana da mahimmanci don amfani da ingantaccen kayan aikin lantarki mai inganci. MOSFETs abubuwa ne masu mahimmanci a cikin na'urorin lantarki, kuma fahimtar su yana da mahimmanci ga masana'anta.
A aikace, akwai masana'antun da ƙila ba za su gamsu da takamaiman ayyuka na MOSFETs yayin aikace-aikacen su ba. Duk da haka, ta hanyar fahimtar ka'idodin aiki na MOSFET a cikin na'urorin lantarki da ayyukan da suka dace, mutum zai iya zaɓar MOSFET mafi dacewa da dabara, la'akari da halayensa na musamman da takamaiman halayen samfurin. Wannan hanyar tana haɓaka aikin samfur, yana ƙarfafa gasa a kasuwa.
WINSOK SOT-23-3 kunshin MOSFET
MOSFET Ka'idojin Aiki
Lokacin da wutar lantarki ta gate-source (VGS) na MOSFET ta zama sifili, ko da tare da aikace-aikacen wutar lantarki mai magudanar ruwa (VDS), koyaushe ana samun haɗin PN a cikin bias, yana haifar da babu tashar gudanarwa (kuma babu halin yanzu) tsakanin. magudanar ruwa da tushen MOSFET. A cikin wannan jiha, magudanar ruwa na yanzu (ID) na MOSFET ba shi da sifili. Aiwatar da ingantacciyar wutar lantarki tsakanin ƙofar da tushe (VGS> 0) yana haifar da filin lantarki a cikin Layer SiO2 insulating Layer tsakanin ƙofar MOSFET da ma'aunin silicon, wanda aka nufa daga ƙofar zuwa nau'in siliki na nau'in P. Ganin cewa oxide Layer yana rufewa, ƙarfin lantarki da aka yi amfani da shi a ƙofar, VGS, ba zai iya samar da halin yanzu a MOSFET ba. Madadin haka, yana samar da capacitor a fadin Layer oxide.
Yayin da VGS ke ƙaruwa a hankali, capacitor yana caji, yana ƙirƙirar filin lantarki. An jawo hankalin wutar lantarki mai kyau a ƙofar, yawancin electrons suna taruwa a daya gefen capacitor, suna samar da tashar sarrafawa ta nau'in N daga magudanar ruwa zuwa tushen a MOSFET. Lokacin da VGS ya wuce ƙarfin ƙarfin kofa VT (yawanci a kusa da 2V), tashar N-tashar MOSFET tana gudanarwa, yana ƙaddamar da kwararar ID na yanzu. Ƙofar tushen wutar lantarki wanda tashar ta fara farawa ana kiranta da ƙarfin ƙarfin kofa VT. Ta hanyar sarrafa girman VGS, sabili da haka filin lantarki, girman magudanar ID na yanzu a MOSFET ana iya daidaita shi.
WINSOK DFN5x6-8 kunshin MOSFET
MOSFET Aikace-aikace
MOSFET sananne ne don kyawawan halayensa na sauyawa, wanda ke haifar da aikace-aikacen sa mai yawa a cikin da'irori masu buƙatar na'urorin lantarki, kamar kayan wutar lantarki. A cikin ƙananan aikace-aikacen wutar lantarki ta amfani da wutar lantarki na 5V, amfani da tsarin al'ada yana haifar da raguwar ƙarfin lantarki a kan tushen-emitter na transistor junction na bipolar (kimanin 0.7V), yana barin 4.3V kawai don ƙarfin lantarki na ƙarshe da aka yi amfani da shi zuwa ƙofar MOSFET. A cikin irin wannan yanayin, zaɓin MOSFET tare da ƙarfin wutar lantarki na ƙofa na 4.5V yana gabatar da wasu haɗari. Wannan ƙalubalen kuma yana bayyana a aikace-aikacen da suka haɗa da 3V ko wasu ƙarancin wutar lantarki.
Lokacin aikawa: Oktoba-27-2023
