Ana amfani da na'urori masu amfani da wutar lantarki sosai a masana'antu, amfani, soja da sauran fannoni, kuma suna da matsayi mai mahimmanci. Bari mu kalli cikakken hoton na'urorin wutar lantarki daga hoto:
Za'a iya raba na'urori masu amfani da wutar lantarki zuwa cikakken nau'in, nau'in sarrafawa mai ƙarfi da nau'in da ba a iya sarrafawa gwargwadon matakin sarrafa siginar kewayawa. Ko kuma bisa ga siginar siginar da'irar tuƙi, ana iya raba shi zuwa nau'in wutar lantarki, nau'in tuƙi na yanzu, da sauransu.
| Rabewa | nau'in | Takamaiman na'urorin semiconductor wuta |
| Gudanar da siginar lantarki | Nau'in Semi-controlled | SCR |
| Cikakken iko | GTO, GTR, MOSFET, IGBT | |
| Ba a iya sarrafawa | Power Diode | |
| Abubuwan siginar tuƙi | Nau'in wutar lantarki | IGBT, MOSFET, SITH |
| Nau'in kore na yanzu | SCR, GTO, GTR | |
| Sigina mai inganci | Nau'in bugun bugun jini | SCR, GTO |
| Nau'in sarrafa lantarki | GTR, MOSFET, IGBT | |
| Halin da na'urorin lantarki masu ɗauka na yanzu ke shiga | na'urar bipolar | Power Diode, SCR, GTO, GTR, BSIT, BJT |
| Na'urar Unipolar | MOSFET, ZAUNA | |
| Na'urar da aka haɗa | MCT, IGBT, SITH da IGCT |
Na'urorin semiconductor na wutar lantarki daban-daban suna da halaye daban-daban kamar irin ƙarfin lantarki, ƙarfin halin yanzu, ƙarfin impedance, da girma. A ainihin amfani, ana buƙatar zaɓin na'urori masu dacewa bisa ga filaye da buƙatu daban-daban.
Masana'antar semiconductor ta shiga cikin tsararraki uku na canje-canjen abu tun lokacin haifuwa. Har ya zuwa yanzu, farkon siminkonductor abu da Si ke wakilta har yanzu ana amfani da shi a fagen na'urorin na'urorin lantarki.
| Semiconductor abu | Bandgap (eV) | Matsayin narkewa (K) | babban aikace-aikace | |
| 1st ƙarni semiconductor kayan | Ge | 1.1 | 1221 | Ƙananan wutar lantarki, ƙananan mita, matsakaicin wutar lantarki, masu gano hoto |
| 2nd tsara semiconductor kayan | Si | 0.7 | 1687 | |
| 3rd tsara semiconductor kayan | Ga | 1.4 | 1511 | Microwave, na'urorin igiyar igiyar millimeter, na'urori masu fitar da haske |
| SiC | 3.05 | 2826 | 1. Maɗaukakin zafin jiki, ƙananan mita, na'urori masu ƙarfi masu ƙarfi na radiation 2. Blue, sa, violet haske-emitting diodes, semiconductor Laser | |
| GaN | 3.4 | 1973 | ||
| AIN | 6.2 | 2470 | ||
| C | 5.5 | ：3800 | ||
| ZnO | 3.37 | 2248 | ||
Taƙaita halaye na na'urorin wutar lantarki masu ƙarfi da cikakken sarrafawa:
| Nau'in na'ura | SCR | GTR | MOSFET | IGBT |
| Nau'in sarrafawa | bugun bugun jini | Ikon yanzu | ikon sarrafa wutar lantarki | cibiyar fim |
| layin rufe kai | Rufewar motsi | na'urar kashe kai | na'urar kashe kai | na'urar kashe kai |
| mitar aiki | 1 khz | 30 khz | 20khz-Mhz | 40 khz |
| Ikon tuƙi | karami | babba | karami | karami |
| canza hasara | babba | babba | babba | babba |
| rashin gudanarwa | karami | karami | babba | karami |
| Voltage da matakin yanzu | 最大 | babba | m | Kara |
| Aikace-aikace na yau da kullun | Matsakaici mitar shigar da dumama | Mai sauya mitar UPS | sauya wutar lantarki | Mai sauya mitar UPS |
| farashin | mafi ƙasƙanci | kasa | a tsakiya | Mafi tsada |
| conductance modulation sakamako | yi | yi | babu | yi |
Ku san MOSFETs
MOSFET yana da ƙarancin shigar da ƙara, ƙaramar amo, da kwanciyar hankali mai kyau; yana da tsari mai sauƙi na masana'anta da radiation mai ƙarfi, don haka yawanci ana amfani dashi a cikin da'irar amplifier ko sauyawa;
(1) Babban sigogi na zaɓi: magudanar ruwa-tushen ƙarfin lantarki VDS (juriya da ƙarfin lantarki), ID ci gaba da yayyo halin yanzu, RDS (akan) kan juriya, ƙarfin shigar da ciss (ƙarfin junction), ingancin ingancin FOM = Ron * Qg, da sauransu.
(2) Dangane da matakai daban-daban, an raba shi zuwa TrenchMOS: mahara MOSFET, galibi a cikin ƙananan ƙarancin wutar lantarki tsakanin 100V; SGT (Ƙofar Raga) MOSFET: Ƙofar raba MOSFET, galibi a cikin matsakaici da ƙarancin ƙarfin lantarki tsakanin 200V; SJ MOSFET: Super junction MOSFET, yafi a cikin High ƙarfin lantarki filin 600-800V;
A cikin wutar lantarki mai sauyawa, kamar buɗaɗɗen magudanar ruwa, ana haɗa magudanar da kayan da ba daidai ba, wanda ake kira buɗaɗɗen ruwa. A cikin da'irar buɗaɗɗen magudanar ruwa, komai girman ƙarfin wutar da aka haɗa kaya, ana iya kunnawa da kashewa. Na'urar sauya fasalin analog ce mai kyau. Wannan shine ka'idar MOSFET azaman na'urar sauyawa.
Dangane da rabon kasuwa, MOSFETs kusan duk sun taru a hannun manyan masana'antun duniya. Daga cikin su, Infineon ya sami IR (Kamfanin Rectifier International na Amurka) a cikin 2015 kuma ya zama jagoran masana'antu. ON Semiconductor kuma ya kammala sayan Fairchild Semiconductor a watan Satumba na 2016. , kasuwar kasuwa ta tashi zuwa matsayi na biyu, sannan kuma tallace-tallacen tallace-tallace sun kasance Renesas, Toshiba, IWC, ST, Vishay, Anshi, Magna, da dai sauransu;
Ana rarraba samfuran MOSFET na yau da kullun zuwa jeri da yawa: Amurka, Jafananci da Koriya.
Jerin Amurka: Infineon, IR, Fairchild, ON Semiconductor, ST, TI, PI, AOS, da dai sauransu;
Jafananci: Toshiba, Renesas, ROHM, da dai sauransu;
Jerin Koriya: Magna, KEC, AUK, Morina Hiroshi, Shinan, KIA
Rukunin fakitin MOSFET
Dangane da yadda ake shigar da shi akan allon PCB, akwai manyan nau'ikan fakitin MOSFET guda biyu: toshe-in (Ta hanyar Hole) da Dutsen saman (Surface Mount). ;
Nau'in plug-in yana nufin cewa fil ɗin MOSFET suna wucewa ta ramukan hawa na allon PCB kuma ana walda su zuwa allon PCB. Fakitin plug-in gama gari sun haɗa da: fakitin in-line dual (DIP), fakitin ƙayyadaddun fakitin transistor (TO), da fakitin grid array (PGA).
Marufi na toshe
Hawan saman shine inda MOSFET fil da flange dissipation flange ke welded zuwa pads a saman allon PCB. Yawancin fakitin dutsen saman sun haɗa da: transistor shaci (D-PAK), ƙaramin transistor shaci (SOT), ƙaramin fakitin shaci (SOP), fakitin quad flat (QFP), mai ɗaukar hoto na filastik (PLCC), da sauransu.
fakitin Dutsen saman
Tare da haɓakar fasaha, allon PCB irin su uwayen uwa da katunan zane a halin yanzu suna amfani da marufi mai sauƙi da ƙasa kai tsaye, kuma ana amfani da marufi da yawa.
1. Kunshin in-line guda biyu (DIP)
Kunshin DIP yana da layuka biyu na fil kuma yana buƙatar saka shi cikin kwas ɗin guntu tare da tsarin DIP. Hanyar fitar da ita ita ce SDIP (Shrink DIP), wanda shine raguwar fakitin layi biyu. Matsakaicin maɗaukaki ya ninka sau 6 sama da na DIP.
Siffofin tsarin marufi na DIP sun haɗa da: Multi-Layer yumbu dual-in-line DIP, yumbu dual-in-line DIP, DIP firam ɗin jagora (ciki har da nau'in rufe gilashin yumbu, nau'in tsarin rufewar filastik, yumbu mai ƙarancin narkewar gilashin encapsulation. nau'in) da dai sauransu. Halayen marufi na DIP shine cewa yana iya gane walda ta hanyar rami na allon PCB kuma yana da dacewa mai kyau tare da motherboard.
Duk da haka, saboda wurin marufi da kauri suna da girma sosai, kuma fil ɗin suna cikin sauƙi lalacewa yayin aikin toshewa da cire kayan aiki, amincin ba shi da kyau. A lokaci guda kuma, saboda tasirin tsarin, adadin fil gabaɗaya baya wuce 100. Saboda haka, a cikin babban haɗin gwiwar masana'antar lantarki, marufi na DIP a hankali ya janye daga mataki na tarihi.
2. Kunshin Bayanin Transistor (TO)
Ƙimar marufi na farko, irin su TO-3P, TO-247, TO-92, TO-92L, TO-220, TO-220F, TO-251, da dai sauransu duk ƙirar marufi ne.
TO-3P/247: Yana da nau'i na marufi da aka saba amfani da shi don matsakaicin matsakaicin ƙarfin lantarki da MOSFETs na yanzu. Samfurin yana da halaye na ƙarfin juriya mai ƙarfi da juriya mai ƙarfi. ;
TO-220/220F: TO-220F cikakken kunshin filastik ne, kuma babu buƙatar ƙara kushin insulating lokacin shigar da shi akan radiator; TO-220 yana da takardar ƙarfe da aka haɗa da fil na tsakiya, kuma ana buƙatar kushin insulating lokacin shigar da radiator. MOSFETs na waɗannan nau'ikan fakitin guda biyu suna da kamanni iri ɗaya kuma ana iya amfani da su musanyawa. ;
TO-251: Ana amfani da wannan kunshin don rage farashi da rage girman samfur. An fi amfani da shi a cikin mahalli mai matsakaicin ƙarfin lantarki da babban halin yanzu ƙasa da 60A da babban ƙarfin lantarki da ke ƙasa da 7N. ;
TO-92: Ana amfani da wannan kunshin ne kawai don MOSFET mai ƙarancin ƙarfin lantarki (a halin yanzu a ƙasa 10A, jurewar wutar lantarki ƙasa da 60V) da babban ƙarfin lantarki 1N60/65, don rage farashi.
A cikin 'yan shekarun nan, saboda tsadar walda na tsarin marufi na toshewa da ƙarancin ƙarancin zafi zuwa samfuran nau'in faci, buƙatu a cikin kasuwar dutsen saman ya ci gaba da ƙaruwa, wanda kuma ya haifar da haɓakar TO marufi. cikin marufi Dutsen surface.
TO-252 (wanda kuma ake kira D-PAK) da TO-263 (D2PAK) duka fakitin hawa ne.
TO kunshin bayyanar samfurin
TO252/D-PAK kunshin guntu ne na filastik, wanda galibi ana amfani da shi don tattara kayan wutan lantarki da kwakwalwan kwamfuta masu daidaita wutar lantarki. Yana ɗaya daga cikin fakiti na yau da kullun na yau da kullun. MOSFET da ke amfani da wannan hanyar marufi tana da na'urorin lantarki guda uku, kofa (G), lambatu (D), da tushe (S). An yanke fil ɗin magudanar ruwa (D) ba a amfani da shi. Madadin haka, ana amfani da magudanar zafi a bayanta azaman magudanar ruwa (D), wanda kai tsaye aka haɗa shi zuwa PCB. A gefe guda, ana amfani da shi don fitar da manyan igiyoyin ruwa, kuma a daya bangaren, yana watsa zafi ta hanyar PCB. Saboda haka, akwai pad D-PAK guda uku akan PCB, kuma kushin (D) ya fi girma. Bayanin marufin sa sune kamar haka:
TO-252/D-PAK ƙayyadaddun girman fakitin
TO-263 shine bambance-bambancen TO-220. An tsara shi musamman don inganta haɓakar samarwa da kuma zubar da zafi. Yana goyan bayan matsanancin halin yanzu da ƙarfin lantarki. Ya fi kowa a cikin MOSFET masu matsakaicin ƙarfin lantarki na yanzu da ke ƙasa da 150A da sama da 30V. Baya ga D2PAK (TO-263AB), ya kuma hada da TO263-2, TO263-3, TO263-5, TO263-7 da sauran salo, wadanda ke karkashin TO-263, musamman saboda bambancin lamba da nisan fil. .
TO-263/D2PAK takamaiman girman fakitins
3. Kunshin grid array (PGA)
Akwai fil ɗin tsararrun murabba'i masu yawa a ciki da wajen guntu PGA (Pin Grid Array Package). Kowane fil ɗin tsararrun murabba'i an shirya shi a wani tazara a kusa da guntu. Dangane da adadin fil, ana iya kafa shi zuwa da'irori 2 zuwa 5. Yayin shigarwa, kawai saka guntu a cikin kwas ɗin PGA na musamman. Yana da abũbuwan amfãni daga cikin sauƙi plugging da cirewa da babban abin dogaro, kuma zai iya daidaita da mafi girma mitoci.
Salon kunshin PGA
Yawancin sassan guntu sa an yi su ne da kayan yumbu, wasu kuma suna amfani da resin robo na musamman a matsayin maƙalar. Dangane da fasaha, nisan tsakiya na fil yawanci shine 2.54mm, kuma adadin fil ya fito daga 64 zuwa 447. Siffar irin wannan nau'in marufi shine cewa ƙaramin yanki na marufi (girma), ƙananan ƙarfin amfani (aiki) ) yana iya jurewa, kuma akasin haka. Wannan nau'in nau'in kwakwalwan kwamfuta ya fi kowa yawa a farkon zamanin, kuma galibi ana amfani da shi don tattara kayan amfani masu ƙarfi kamar CPUs. Misali, Intel's 80486 da Pentium duk suna amfani da wannan salon marufi; masana'antun MOSFET ba su karɓe shi sosai.
4. Karamin Fakitin Transistor (SOT)
SOT (Small Out-line Transistor) wani nau'in faci ne na ƙaramin ƙarfin transistor, wanda ya haɗa da SOT23, SOT89, SOT143, SOT25 (watau SOT23-5), da dai sauransu SOT323, SOT363/SOT26 (watau SOT23-6) da sauran nau'ikan. wanda aka samu, waɗanda suka fi ƙanƙanta girma fiye da fakitin TO.
Nau'in kunshin SOT
SOT23 kunshin transistor ne da aka saba amfani da shi tare da filaye masu siffar fuka uku, wato Collector, emitter da base, wadanda aka jera a bangarorin biyu na dogon gefen bangaren. Daga cikinsu, emitter da tushe suna gefe guda. Sun zama gama gari a cikin ƙananan wutar lantarki, transistor tasirin filin da hadadden transistor tare da cibiyoyin sadarwa na resistor. Suna da kyau ƙarfi amma matalauta solderability. Ana nuna bayyanar a cikin hoto (a) a ƙasa.
SOT89 yana da gajerun fil uku da aka rarraba a gefe ɗaya na transistor. Daya gefen shi ne wani karfe na zafi nutse da aka haɗa zuwa tushe don ƙara yawan zafin zafi. Yana da na kowa a cikin siliki ikon saman dutsen transistor kuma ya dace da aikace-aikacen wutar lantarki mafi girma. Ana nuna bayyanar a Hoto (b) a ƙasa. ;
SOT143 yana da fitilun gajerun nau'ikan fiffike guda huɗu, waɗanda aka fitar da su daga bangarorin biyu. Faɗin ƙarshen fil shine mai tarawa. Irin wannan nau'in kunshin ya zama ruwan dare a cikin manyan transistor, kuma ana nuna kamanninsa a hoto (c) a ƙasa. ;
SOT252 transistor ne mai ƙarfi mai ƙarfi tare da fitillu guda uku da ke jagora daga gefe ɗaya, kuma fil ɗin tsakiya ya fi guntu kuma shine mai tarawa. Haɗa zuwa babban fil a ɗayan ƙarshen, wanda shine takardar tagulla don zubar da zafi, kuma bayyanarsa yana nunawa a cikin hoto (d) a ƙasa.
Kwatanta bayyanar fakitin SOT gama gari
SOT-89 MOSFET mai tsayi huɗu ana amfani da shi akan uwayen uwa. Ƙayyadaddun sa da girmansa sune kamar haka:
SOT-89 MOSFET girma dalla-dalla (naúrar: mm)
5. Karamin Kunshin Shafi (SOP)
SOP (Ƙananan Kunshin Layi) ɗaya ne daga cikin fakitin hawa sama, wanda kuma ake kira SOL ko DFP. Ana zana fil ɗin daga ɓangarorin biyu na kunshin a cikin siffar reshen reshen teku (Siffa L). Kayayyakin sune filastik da yumbu. Ma'aunin marufi na SOP sun haɗa da SOP-8, SOP-16, SOP-20, SOP-28, da sauransu. Lamba bayan SOP yana nuna adadin fil. Yawancin fakitin MOSFET SOP suna ɗaukar ƙayyadaddun bayanai na SOP-8. Sau da yawa masana'antar tana barin "P" kuma ta rage ta da SO (Ƙananan Layi).
Girman kunshin SOP-8
Kamfanin PHILIP ne ya fara samar da SO-8. An shirya shi a cikin filastik, ba shi da farantin ƙasa mai zafi, kuma ba shi da ƙarancin zafi. Ana amfani da shi gabaɗaya don MOSFETs masu ƙarancin ƙarfi. Daga baya, daidaitattun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun bayanai kamar TSOP (Package Small Short Package), VSOP (Package Small Short Package), SSOP (Shrink SOP), TSSOP (Thin Shrink SOP), da sauransu. A cikin su, TSOP da TSSOP ana amfani da su a cikin marufi na MOSFET.
Abubuwan da aka samo SOP da aka saba amfani da su don MOSFETs
6. Kunshin Flat Quad (QFP)
Nisa tsakanin fil ɗin guntu a cikin kunshin QFP (Plastic Quad Flat Package) ƙanƙanta ne kuma fil ɗin suna sirara sosai. Gabaɗaya ana amfani da shi a cikin manyan sikeli ko matsananci-manyan da'irori, kuma adadin fil gabaɗaya ya zarce 100. Chips ɗin da aka haɗa a cikin wannan tsari dole ne su yi amfani da fasahar hawan saman saman SMT don siyar da guntu zuwa motherboard. Wannan hanyar marufi yana da manyan halaye guda huɗu: ① Ya dace da fasahar hawa saman SMD don shigar da wayoyi akan allunan kewaye na PCB; ② Ya dace da amfani mai yawa; ③ Yana da sauƙin aiki kuma yana da babban abin dogaro; ④ Matsakaicin tsakanin guntu yankin da marufi yanki ne karami. Kamar hanyar fakitin PGA, wannan hanyar marufi tana nannade guntu a cikin fakitin filastik kuma ba za ta iya watsar da zafin da ake samu ba lokacin da guntu ke aiki a kan lokaci. Yana ƙuntata haɓaka aikin MOSFET; kuma fakitin filastik kanta yana ƙara girman na'urar, wanda bai dace da buƙatun ci gaban semiconductor ba a cikin hanyar zama haske, bakin ciki, gajere, da ƙananan. Bugu da ƙari, irin wannan hanyar marufi yana dogara ne akan guntu guda ɗaya, wanda ke da matsalolin ƙananan haɓakar samar da kayan aiki da tsadar kaya. Saboda haka, QFP ya fi dacewa don amfani a cikin ma'ana na dijital LSI da'irori kamar microprocessors / kofa arrays, kuma ya dace da marufi na analog LSI kewaye kayayyakin kamar VTR siginar sarrafa da audio siginar aiki.
7. Quad lebur kunshin ba tare da jagora (QFN)
Kunshin na QFN (Quad Flat Non-leaded) sanye yake da lambobin lantarki a duk bangarorin hudu. Tun da babu jagora, wurin hawan ya fi QFP ƙarami kuma tsayin ya yi ƙasa da QFP. Daga cikin su, yumbu QFN kuma ana kiransa LCC (Leadless Chip Carriers), da kuma low-cost filastik QFN ta amfani da gilashin epoxy guduro bugu substrate tushe abu ake kira filastik LCC, PCLC, P-LCC, da dai sauransu Yana da wani kunno kai surface Dutsen guntu marufi. fasaha tare da ƙananan girman kushin, ƙaramin ƙara, da filastik azaman abin rufewa. Ana amfani da QFN musamman don haɗaɗɗen marufi, kuma MOSFET ba za a yi amfani da shi ba. Koyaya, saboda Intel ya ba da shawarar haɗaɗɗen direba da mafita na MOSFET, ya ƙaddamar da DrMOS a cikin kunshin QFN-56 ("56" yana nufin fil ɗin haɗin 56 a bayan guntu).
Ya kamata a lura cewa kunshin QFN yana da daidaitaccen tsarin jagora na waje kamar fakitin ƙarami mai ƙanƙanta (TSSOP), amma girmansa shine 62% ƙarami fiye da TSSOP. Dangane da bayanan ƙirar QFN, aikin zafinsa shine 55% sama da na marufi na TSSOP, kuma aikin sa na lantarki (inductance da capacitance) sun fi 60% da 30% sama da marufi na TSSOP bi da bi. Babban hasara shi ne cewa yana da wuya a gyara.
DrMOS a cikin kunshin QFN-56
Kayan wutar lantarki masu hankali na DC/DC na al'ada ba za su iya biyan buƙatu don yawan ƙarfin wutar lantarki ba, kuma ba za su iya magance matsalar tasirin siga na parasitic ba a mitoci masu yawa. Tare da haɓakawa da ci gaban fasaha, ya zama gaskiya don haɗa direbobi da MOSFET don gina nau'ikan guntu masu yawa. Wannan hanyar haɗin kai na iya adana sararin sarari da ƙara yawan amfani da wutar lantarki. Ta hanyar inganta direbobi da MOSFETs, ya zama gaskiya. Ingantacciyar wutar lantarki da ingancin halin yanzu na DC, wannan shine DrMOS hadedde direban IC.
Renesas 2nd tsara DrMOS
Kunshin mara amfani na QFN-56 ya sa DrMOS thermal impedance ya ragu sosai; tare da haɗin waya na ciki da ƙirar ƙirar tagulla, za a iya rage girman wayoyi na PCB na waje, ta haka rage inductance da juriya. Bugu da ƙari, tsarin MOSFET silicon mai zurfi da aka yi amfani da shi zai iya rage yawan sarrafawa, sauyawa da asarar cajin ƙofar; ya dace da masu sarrafawa iri-iri, yana iya cimma yanayin aiki daban-daban, kuma yana goyan bayan yanayin jujjuya lokaci mai aiki APS (Auto Phase Switching). Baya ga marufi na QFN, marufi maras gubar lebur biyu (DFN) kuma sabon tsarin marufi ne na lantarki wanda aka yi amfani da shi sosai a sassa daban-daban na ON Semiconductor. Idan aka kwatanta da QFN, DFN yana da ƙananan na'urorin fitar da gubar a ɓangarorin biyu.
8
PLCC (Plastic Quad Flat Package) yana da siffar murabba'i kuma ya fi ƙanƙanta da fakitin DIP. Yana da fil 32 tare da fil a kewaye. Ana fitar da fil ɗin daga ɓangarorin huɗu na kunshin a cikin siffar T. Samfurin filastik ne. Tsakanin tsakiyar fil ɗin shine 1.27mm, kuma adadin fil ɗin ya fito daga 18 zuwa 84. Fil ɗin J-dimbin yawa ba su da sauƙi da sauƙi kuma suna da sauƙin aiki fiye da QFP, amma duban bayyanar bayan walda yana da wahala. Marufi na PLCC ya dace don shigar da wayoyi akan PCB ta amfani da fasahar hawa saman SMT. Yana da abũbuwan amfãni daga kananan size da babban abin dogara. Fakitin PLCC ya zama ruwan dare gama gari kuma ana amfani dashi a cikin ma'ana LSI, DLD (ko na'urar dabaru na shirin) da sauran da'irori. Ana amfani da wannan nau'in marufi sau da yawa a cikin motherboard BIOS, amma a halin yanzu ba a cika samunsa ba a MOSFETs.
Ƙaddamarwa da haɓakawa ga manyan kamfanoni
Saboda haɓakar haɓakar ƙarancin wutar lantarki da babban halin yanzu a cikin CPUs, ana buƙatar MOSFETs don samun babban fitarwa na yanzu, ƙarancin juriya, ƙarancin zafi, saurin zafi, da ƙaramin girma. Baya ga inganta fasahar samar da guntu da matakai, masana'antun MOSFET kuma suna ci gaba da inganta fasahar marufi. Dangane da dacewa tare da daidaitattun ƙayyadaddun bayyanar, suna ba da shawarar sabbin sifofin marufi da rajistar sunayen alamar kasuwanci don sabbin fakitin da suka haɓaka.
1, RENESAS WPAK, LFPAK da LFPAK-I fakiti
WPAK wani fakitin zafi ne mai zafi wanda Renesas ya haɓaka. Ta hanyar yin koyi da kunshin D-PAK, ana yin waldaran zafin zafin jiki na chip ɗin zuwa motherboard, kuma zafin yana zubewa ta cikin motherboard, ta yadda ƙaramin kunshin WPAK zai iya isa wurin fitarwa na D-PAK. WPAK-D2 manyan MOSFET guda biyu masu girma / ƙananan don rage inductance na waya.
Girman fakitin Renesas WPAK
LFPAK da LFPAK-I wasu ƙananan fakiti ne guda biyu waɗanda Renesas suka haɓaka waɗanda suka dace da SO-8. LFPAK yayi kama da D-PAK, amma ƙasa da D-PAK. LFPAK-i yana sanya magudanar zafi zuwa sama don watsar da zafi ta wurin kwamin zafi.
Renesas LFPAK da LFPAK-I fakiti
2. Vishay Power-PAK da Polar-PAK marufi
Power-PAK shine sunan fakitin MOSFET wanda Vishay Corporation yayi rijista. Power-PAK ya haɗa da ƙayyadaddun bayanai guda biyu: Power-PAK1212-8 da Power-PAK SO-8.
Vishay Power-PAK1212-8 kunshin
Vishay Power-PAK SO-8 kunshin
Polar PAK ƙaramin fakiti ne tare da ɓarkewar zafi mai fuska biyu kuma ɗayan fasahar marufi ne na Vishay. Polar PAK daidai yake da fakitin so-8 na yau da kullun. Yana da wuraren tarwatsewa a duka manyan bangarorin kunshin. Ba shi da sauƙi a tara zafi a cikin kunshin kuma yana iya ƙara yawan ƙarfin aiki na yanzu zuwa sau biyu na SO-8. A halin yanzu, Vishay ya ba da lasisin fasahar Polar PAK zuwa STMicroelectronics.
Vishay Polar PAK kunshin
3. Onsemi SO-8 da WDFN8 fakitin gubar lebur
ON Semiconductor ya haɓaka nau'ikan MOSFET na lebur guda biyu, daga cikinsu akwai SO-8 masu dacewa da lebur-lead da alluna da yawa. ON Semiconductor sabon ƙaddamar da NVMx da NVTx ikon MOSFETs suna amfani da ƙaramin fakitin DFN5 (SO-8FL) da WDFN8 don rage asarar sarrafawa. Hakanan yana da ƙarancin QG da ƙarfin aiki don rage asarar direba.
ON Semiconductor SO-8 Flat Lead Kunshin
ON Kunshin Semiconductor WDFN8
4. NXP LFPAK da QLPAK marufi
NXP (tsohon Philps) ya inganta fasahar marufi SO-8 zuwa LFPAK da QLPAK. Daga cikin su, ana ɗaukar LFPAK a matsayin mafi girman abin dogara ga kunshin SO-8 a duniya; yayin da QLPAK yana da halaye na ƙananan girman kuma mafi girman haɓakar zafi. Idan aka kwatanta da SO-8 na yau da kullun, QLPAK ya mamaye yanki na hukumar PCB na 6*5mm kuma yana da juriya na thermal na 1.5k/W.
NXP LFPAK kunshin
NXP QLPAK marufi
4. ST Semiconductor PowerSO-8 kunshin
STMicroelectronics 'ikon MOSFET fasahar marufi guntu sun haɗa da SO-8, PowerSO-8, PowerFLAT, DirectFET, PolarPAK, da sauransu. Daga cikin su, Power SO-8 shine ingantaccen sigar SO-8. Bugu da kari, akwai PowerSO-10, PowerSO-20, TO-220FP, H2PAK-2 da sauran fakiti.
Kunshin STMicroelectronics Power SO-8
5. Fakitin Fairchild Semiconductor Power 56
Power 56 shine keɓaɓɓen sunan Farichild, kuma sunansa na hukuma shine DFN5×6. Yankin marufin sa yana kwatankwacin na TSOP-8 da aka saba amfani da shi, kuma kunshin bakin ciki yana adana tsayin share fage, kuma ƙirar Thermal-Pad a ƙasa yana rage juriya na thermal. Don haka, yawancin masana'antun na'urorin wutar lantarki sun tura DFN5 × 6.
Kunshin Fairchild Power 56
6. Kunshin Rectifier International (IR) Direct FET
Direct FET yana ba da ingantaccen sanyaya sama a cikin SO-8 ko ƙaramin sawun ƙafa kuma ya dace da aikace-aikacen sauya wutar lantarki na AC-DC da DC-DC a cikin kwamfutoci, kwamfyutoci, sadarwa da kayan lantarki na mabukaci. Karfe na DirectFET na iya ginawa yana ba da ɓarkewar zafi mai fuska biyu, yadda ya kamata ya ninka ƙarfin iya sarrafa na yanzu na manyan juzu'i na DC-DC idan aka kwatanta da daidaitattun fakitin filastik. Kunshin kai tsaye FET nau'i ne mai juyawa, tare da magudanar zafi (D) yana fuskantar sama kuma an lulluɓe shi da harsashi na ƙarfe, ta inda zafi ke watsawa. Marufi na FET kai tsaye yana inganta haɓakar zafi sosai kuma yana ɗaukar ƙasa da sarari tare da watsawar zafi mai kyau.
Takaita
A nan gaba, yayin da masana'antun masana'antu na lantarki ke ci gaba da haɓakawa ta hanyar ultra-bakin ciki, miniaturization, ƙarancin wutar lantarki, da babban halin yanzu, bayyanar da tsarin marufi na MOSFET shima zai canza don dacewa da bukatun haɓaka masana'antu. masana'antu. Bugu da ƙari, don rage ƙimar zaɓi don masana'antun lantarki, yanayin ci gaban MOSFET a cikin tsarin daidaitawa da marufi matakin tsarin zai ƙara bayyana a fili, kuma samfuran za su haɓaka ta hanyar daidaitawa daga ma'auni masu yawa kamar aiki da farashi. . Kunshin yana ɗaya daga cikin mahimman abubuwan tunani don zaɓin MOSFET. Kayayyakin lantarki daban-daban suna da buƙatun lantarki daban-daban, kuma mahallin shigarwa daban-daban kuma suna buƙatar ƙayyadaddun ƙayyadaddun girman daidai don saduwa. A cikin zaɓi na ainihi, ya kamata a yanke shawara bisa ga ainihin buƙatun ƙarƙashin ƙa'idar gaba ɗaya. Wasu tsarin lantarki suna iyakance ta girman PCB da tsayin ciki. Misali, tsarin samar da wutar lantarki na tsarin sadarwa yawanci yana amfani da fakitin DFN5*6 da DFN3*3 saboda hani mai tsayi; a wasu kayan wutan lantarki na ACDC, ƙira-ƙira-ƙasa-ƙasa ko saboda iyakancewar harsashi sun dace don haɗa MOSFETs na fakitin wutar lantarki TO220. A wannan lokacin, ana iya shigar da fil ɗin kai tsaye a cikin tushen, wanda bai dace da samfuran kunshin TO247 ba; wasu ƙananan ƙira-ƙira suna buƙatar fil ɗin na'urar a lanƙwasa su shimfiɗa ƙasa, wanda zai ƙara rikitarwa na zaɓin MOSFET.
Yadda za a zabi MOSFET
Wani injiniya ya taɓa gaya mani cewa bai taɓa kallon shafi na farko na takardar bayanan MOSFET ba saboda bayanin "m" kawai ya bayyana a shafi na biyu da kuma bayansa. Kusan kowane shafi akan takardar bayanan MOSFET ya ƙunshi bayanai masu mahimmanci ga masu ƙira. Amma ba koyaushe ba ne bayyananne yadda ake fassara bayanan da masana'antun ke bayarwa.
Wannan labarin ya zayyana wasu mahimman bayanai na MOSFETs, yadda aka bayyana su akan takaddar bayanan, da bayyananniyar hoto da kuke buƙatar fahimtar su. Kamar yawancin na'urorin lantarki, MOSFETs suna shafar yanayin aiki. Don haka yana da mahimmanci a fahimci yanayin gwajin da aka yi amfani da alamun da aka ambata. Hakanan yana da mahimmanci a gane ko alamun da kuke gani a cikin "Gabatarwa Samfura" sune "mafi girman" ko "na al'ada" dabi'u, saboda wasu takaddun bayanai ba su bayyana ba.
Matsayin ƙarfin lantarki
Siffa ta farko da ke kayyade MOSFET ita ce magudanar wutar lantarki ta VDS, ko "magudanar ruwa mai rushewar wutar lantarki", wanda shine mafi girman ƙarfin da MOSFET ke iya jurewa ba tare da lalacewa ba lokacin da ƙofar ta ɗan kewaya zuwa tushen da magudanar halin yanzu. 250 μA. . Ana kuma kiran VDS "cikakken matsakaicin ƙarfin lantarki a 25 ° C", amma yana da mahimmanci a tuna cewa wannan cikakkiyar ƙarfin lantarki yana dogara da yanayin zafi, kuma yawanci akwai "madaidaicin zafin jiki na VDS" a cikin takardar bayanan. Hakanan kuna buƙatar fahimtar cewa matsakaicin VDS shine ƙarfin wutar lantarki na DC tare da kowane irin ƙarfin lantarki da ripples waɗanda zasu iya kasancewa a cikin kewaye. Misali, idan kayi amfani da na'urar 30V akan wutar lantarki mai karfin 30V tare da karu 100mV, 5ns, karfin wutar lantarki zai wuce madaidaicin iyakar na'urar kuma na'urar na iya shiga yanayin bala'i. A wannan yanayin, ba za a iya tabbatar da amincin MOSFET ba. A babban yanayin zafi, ma'aunin zafin jiki na iya canza ƙarfin rushewar. Misali, wasu MOSFETs N-channel tare da ƙimar ƙarfin lantarki na 600V suna da ingantaccen ƙimar zafin jiki. Yayin da suke kusanci matsakaicin zafin mahaɗin su, ƙimar zafin jiki yana haifar da waɗannan MOSFETs suyi kama da 650V MOSFETs. Yawancin dokokin ƙira masu amfani da MOSFET suna buƙatar ƙima na 10% zuwa 20%. A wasu zane-zane, la'akari da cewa ainihin ƙarfin wutar lantarki yana da 5% zuwa 10% mafi girma fiye da ƙimar da aka ƙididdige a 25 ° C, za a ƙara madaidaicin ƙira mai amfani ga ainihin ƙira, wanda ke da amfani sosai ga ƙira. Hakanan mahimmanci ga daidaitaccen zaɓi na MOSFET shine fahimtar rawar wutar lantarki ta tushen ƙofar VGS yayin tsarin gudanarwa. Wannan ƙarfin lantarki shine ƙarfin lantarki wanda ke tabbatar da cikakken gudanar da MOSFET a ƙarƙashin ƙayyadaddun matsakaicin yanayin RDS(akan). Wannan shine dalilin da ya sa akan-juriya koyaushe yana da alaƙa da matakin VGS, kuma a wannan ƙarfin ne kawai za'a iya kunna na'urar. Muhimmin sakamakon ƙira shine ba za ku iya kunna MOSFET gabaɗaya tare da ƙarfin lantarki ƙasa da mafi ƙarancin VGS da aka yi amfani da shi don cimma ƙimar RDS(on). Misali, don fitar da MOSFET cikakke tare da microcontroller 3.3V, kuna buƙatar kunna MOSFET a VGS=2.5V ko ƙasa.
A kan juriya, cajin kofa, da "ƙididdigar cancanta"
Juriya na MOSFET koyaushe ana ƙayyade shi a ɗaya ko fiye da ƙarfin kofa zuwa tushen tushe. Matsakaicin iyakar RDS(on) zai iya zama 20% zuwa 50% sama da ƙimar al'ada. Matsakaicin iyaka na RDS(on) yawanci yana nufin ƙima a madaidaicin zafin jiki na 25°C. A yanayin zafi mafi girma, RDS (on) na iya ƙaruwa da 30% zuwa 150%, kamar yadda aka nuna a cikin Hoto 1. Tun da RDS (akan) canje-canje tare da zafin jiki kuma ƙarancin juriya ba za a iya garanti ba, gano halin yanzu dangane da RDS (on) ba hanya madaidaiciya.
Hoto 1 RDS(on) yana ƙaruwa tare da zafin jiki a cikin kewayon 30% zuwa 150% na matsakaicin zafin aiki
Juriya yana da matukar mahimmanci ga N-channel da P-tashar MOSFETs. A cikin sauya kayan wuta, Qg shine babban ma'aunin zaɓi na tashar N-channel MOSFETs da aka yi amfani da su wajen sauya kayan wuta saboda Qg yana rinjayar asarar canji. Waɗannan asara suna da tasiri guda biyu: ɗaya shine lokacin sauyawa wanda ke shafar MOSFET a kunne da kashewa; ɗayan shine makamashin da ake buƙata don cajin ƙarfin ƙofar ƙofar yayin kowane tsarin sauyawa. Abu daya da ya kamata a tuna shi ne cewa Qg ya dogara da ƙarfin wutar lantarki na ƙofar kofa, koda kuwa yin amfani da ƙananan Vgs yana rage asarar canzawa. A matsayin hanya mai sauri don kwatanta MOSFETs da aka yi niyyar amfani da su wajen sauya aikace-aikace, masu zanen kaya sukan yi amfani da dabara guda ɗaya da ta ƙunshi RDS(on) don asarar gudanarwa da kuma Qg don sauya asarar: RDS(on) xQg. Wannan " adadi na cancanta" (FOM) yana taƙaita aikin na'urar kuma yana ba da damar MOSFETs a kwatanta su cikin ma'auni ko mafi girman ƙima. Don tabbatar da ingantacciyar kwatance a cikin na'urori, kuna buƙatar tabbatar da cewa ana amfani da VGS iri ɗaya don RDS(on) da Qg, kuma ba a haɗa madaidaitan ƙima da ƙima a cikin ɗaba'ar. Ƙananan FOM zai ba ku mafi kyawun aiki a sauya aikace-aikacen, amma ba shi da garanti. Za'a iya samun mafi kyawun sakamakon kwatancen kawai a cikin ainihin da'irar, kuma a wasu lokuta ana iya buƙatar da'irar da ta dace don kowane MOSFET. Ƙididdigar halin yanzu da ɓarna wutar lantarki, dangane da yanayin gwaji daban-daban, yawancin MOSFETs suna da guda ɗaya ko fiye da ci gaba da magudanar ruwa a cikin takardar bayanan. Za ku so a duba takardar bayanan a hankali don gano ko ƙimar ta kasance a ƙayyadadden yanayin yanayin yanayin (misali TC=25°C), ko zafin yanayi (misali TA=25°C). Wanne daga cikin waɗannan dabi'u ya fi dacewa zai dogara da halayen na'urar da aikace-aikacen (duba Hoto 2).
Hoto 2 Duk cikakkiyar madaidaicin halin yanzu da ƙimar wuta bayanai ne na gaske
Don ƙananan na'urori masu hawa saman da ake amfani da su a cikin na'urorin hannu, matakin da ya fi dacewa a halin yanzu yana iya kasancewa a yanayin zafi na 70°C. Don manyan kayan aiki tare da zafi mai zafi da kuma sanyaya iska mai tilastawa, matakin yanzu a TA = 25 ℃ na iya zama kusa da ainihin halin da ake ciki. Ga wasu na'urori, mutu zai iya ɗaukar ƙarin halin yanzu a matsakaicin zafin mahaɗinsa fiye da iyakar kunshin. A wasu takaddun bayanai, wannan matakin na yanzu na "mutu-iyakantacce" ƙarin bayani ne zuwa matakin "kunshi-iyakan" na yanzu, wanda zai iya ba ku ra'ayi na ƙarfin mutuwa. Irin wannan la'akari ya shafi ci gaba da lalata wutar lantarki, wanda ya dogara ba kawai akan zafin jiki ba har ma a kan lokaci. Ka yi tunanin na'urar tana ci gaba da aiki a PD=4W na daƙiƙa 10 a TA=70℃. Abin da ya ƙunshi lokacin "ci gaba" zai bambanta dangane da kunshin MOSFET, don haka za ku so kuyi amfani da madaidaicin madaidaicin madaidaicin madaidaicin madaidaicin ma'auni daga bayanan bayanan don ganin yadda wutar lantarki tayi kama bayan daƙiƙa 10, daƙiƙa 100, ko mintuna 10 . Kamar yadda aka nuna a cikin hoto na 3, madaidaicin juriya na thermal na wannan na'ura ta musamman bayan bugun bugun dakika 10 ya kai kusan 0.33, wanda ke nufin cewa da zarar kunshin ya kai ga saturation na thermal bayan kusan mintuna 10, karfin zafin na'urar yana da 1.33W maimakon 4W kawai. . Kodayake ƙarfin watsar da zafi na na'urar na iya kaiwa kusan 2W ƙarƙashin sanyaya mai kyau.
Hoto 3 Juriya na thermal na MOSFET lokacin da ake amfani da bugun jini
A zahiri, zamu iya raba yadda ake zaɓar MOSFET zuwa matakai huɗu.
Mataki na farko: zaɓi tashar N ko tashar P
Mataki na farko na zaɓar na'urar da ta dace don ƙirar ku shine yanke shawarar ko za a yi amfani da tashar N-channel ko P-channel MOSFET. A cikin aikace-aikacen wutar lantarki na yau da kullun, lokacin da MOSFET ta haɗa zuwa ƙasa kuma an haɗa kaya zuwa babban ƙarfin lantarki, MOSFET yana ƙirƙirar maɓalli mai ƙarancin gefe. A cikin ƙaramin gefe, MOSFETs N-channel yakamata a yi amfani da shi saboda la'akari da ƙarfin lantarki da ake buƙata don kashe na'urar. Lokacin da MOSFET ta haɗa da bas ɗin da lodi zuwa ƙasa, ana amfani da maɓalli mai tsayi. P-tashar MOSFETs yawanci ana amfani da su a cikin wannan topology, wanda kuma ya faru ne saboda la'akari da ƙarfin lantarki. Don zaɓar na'urar da ta dace don aikace-aikacenku, dole ne ku ƙayyade ƙarfin lantarki da ake buƙata don fitar da na'urar da hanya mafi sauƙi don yin ta a cikin ƙirar ku. Mataki na gaba shine tantance ƙimar ƙarfin lantarki da ake buƙata, ko matsakaicin ƙarfin lantarki da na'urar zata iya jurewa. Mafi girman ƙimar ƙarfin lantarki, mafi girman farashin na'urar. Dangane da ƙwarewar aiki, ƙimar ƙarfin lantarki yakamata ya zama mafi girma fiye da babban ƙarfin lantarki ko ƙarfin motar bas. Wannan zai ba da isasshen kariya ta yadda MOSFET ba za ta gaza ba. Lokacin zabar MOSFET, yana da mahimmanci don ƙayyade matsakaicin ƙarfin lantarki wanda za'a iya jurewa daga magudanar ruwa zuwa tushen, wato, matsakaicin VDS. Yana da mahimmanci a san cewa matsakaicin ƙarfin lantarki MOSFET na iya jure canje-canje tare da zafin jiki. Dole ne masu ƙira su gwada bambance-bambancen irin ƙarfin lantarki akan duk iyakar zafin aiki. Ƙididdigar ƙarfin lantarki dole ne ya sami isasshen gefe don rufe wannan kewayon bambancin don tabbatar da cewa kewaye ba za ta gaza ba. Sauran abubuwan aminci waɗanda injiniyoyi ke buƙatar la'akari da su sun haɗa da wutar lantarki mai wucewa ta hanyar sauya kayan lantarki kamar injina ko taswira. Ƙimar wutar lantarki ta bambanta don aikace-aikace daban-daban; yawanci, 20V don na'urori masu ɗaukuwa, 20-30V don samar da wutar lantarki na FPGA, da 450-600V don aikace-aikacen 85-220VAC.
Mataki 2: Ƙayyade ƙimar halin yanzu
Mataki na biyu shine zabar ƙimar MOSFET na yanzu. Dangane da tsarin da'irar, wannan ƙimar halin yanzu yakamata ya zama matsakaicin halin yanzu wanda kaya zai iya jurewa a ƙarƙashin kowane yanayi. Kama da yanayin wutar lantarki, dole ne mai zane ya tabbatar da cewa MOSFET da aka zaɓa zai iya jure wa wannan ƙimar na yanzu, koda lokacin da tsarin ke haifar da spikes na yanzu. Yanayin halin yanzu guda biyu da aka yi la'akari da su sune yanayin ci gaba da bugun bugun jini. A cikin ci gaba da tafiyar da yanayin, MOSFET yana cikin tsayayyen yanayi, inda halin yanzu ke gudana ta hanyar na'urar. Ƙaƙwalwar bugun jini tana nufin babban hawan jini (ko ƙarar halin yanzu) da ke gudana ta cikin na'urar. Da zarar an ƙayyade iyakar halin yanzu a ƙarƙashin waɗannan sharuɗɗan, kawai batun zaɓin na'ura ce da za ta iya ɗaukar wannan matsakaicin halin yanzu. Bayan zabar ƙimar halin yanzu, asarar tafiyarwa dole ne kuma a ƙididdige shi. A cikin ainihin yanayi, MOSFET ba na'ura ce mai kyau ba saboda akwai asarar makamashin lantarki yayin tsarin tafiyarwa, wanda ake kira asarar gudanarwa. MOSFET yana yin kama da m resistor lokacin "kunna", wanda RDS(ON) na na'urar ya ƙaddara kuma yana canzawa sosai tare da zafin jiki. Ana iya ƙididdige asarar wutar lantarki ta Iload2 × RDS(ON). Tun lokacin juriya yana canzawa tare da zafin jiki, asarar wutar kuma zata canza daidai gwargwado. Mafi girman ƙarfin wutar lantarki VGS da ake amfani da shi ga MOSFET, ƙarami RDS(ON) zai kasance; Sabanin haka, mafi girman RDS(ON) zai kasance. Ga mai tsara tsarin, wannan shine inda kasuwancin ke shigowa dangane da ƙarfin tsarin. Don ƙirar ƙirar šaukuwa, yana da sauƙi (kuma mafi yawan gama gari) don amfani da ƙananan ƙarfin lantarki, yayin da don ƙirar masana'antu, ana iya amfani da ƙananan ƙarfin lantarki. Lura cewa juriya na RDS(ON) zai tashi kadan tare da halin yanzu. Ana iya samun bambance-bambance a cikin sigogin lantarki daban-daban na resistor RDS(ON) a cikin takardar bayanan fasaha da masana'anta suka bayar. Fasaha tana da tasiri mai mahimmanci akan halayen na'ura, saboda wasu fasahohin suna ƙara haɓaka RDS(ON) lokacin haɓaka matsakaicin VDS. Don irin wannan fasaha, idan kuna da niyyar rage VDS da RDS(ON), dole ne ku ƙara girman guntu, ta haka ƙara girman fakitin da ya dace da farashin haɓaka masu alaƙa. Akwai fasahohi da yawa a cikin masana'antar da ke ƙoƙarin sarrafa haɓakar girman guntu, mafi mahimmancin su shine tashoshi da fasahar daidaita caji. A cikin fasahar maɓalli, rami mai zurfi yana cikin wafer, yawanci ana tanada shi don ƙananan ƙarfin lantarki, don rage juriya RDS(ON). Don rage tasirin matsakaicin VDS akan RDS (ON), an yi amfani da ginshiƙin girma na epitaxial / etching ginshiƙi yayin aiwatar da ci gaba. Misali, Fairchild Semiconductor ya haɓaka fasaha mai suna SuperFET wanda ke ƙara ƙarin matakan masana'antu don rage RDS(ON). Wannan mayar da hankali kan RDS (ON) yana da mahimmanci saboda yayin da raguwar ƙarfin lantarki na daidaitaccen MOSFET ya karu, RDS (ON) yana ƙaruwa da yawa kuma yana haifar da karuwa a girman mutu. Tsarin SuperFET yana canza alaƙar da ke tsakanin RDS(ON) da girman wafer zuwa alaƙar layi. Ta wannan hanyar, na'urori na SuperFET na iya cimma madaidaicin ƙarancin RDS(ON) a cikin ƙananan masu girma dabam, har ma da raguwar ƙarfin lantarki har zuwa 600V. Sakamakon shi ne cewa za a iya rage girman wafer har zuwa 35%. Ga masu amfani na ƙarshe, wannan yana nufin raguwa mai girma a girman kunshin.
Mataki na Uku: Ƙayyade Bukatun Thermal
Mataki na gaba don zaɓar MOSFET shine ƙididdige buƙatun thermal na tsarin. Dole ne masu zanen kaya suyi la'akari da yanayi guda biyu daban-daban, mafi munin yanayi da kuma ainihin yanayin duniya. Ana ba da shawarar yin amfani da sakamakon ƙididdiga mafi muni, saboda wannan sakamakon yana ba da mafi girman ƙimar aminci kuma yana tabbatar da cewa tsarin ba zai gaza ba. Hakanan akwai wasu bayanan ma'auni waɗanda ke buƙatar kulawa akan takardar bayanan MOSFET; kamar juriya na thermal tsakanin mahaɗin semiconductor na na'urar da aka haɗa da muhalli, da matsakaicin zafin haɗuwa. Matsakaicin yanayin mahaɗin na'urar daidai yake da matsakaicin zafin yanayi tare da samfurin juriya na zafi da tarwatsewar wuta (zazzabi na mahaɗa = matsakaicin zafin yanayi + [juriya ta thermal × lalata wutar lantarki]). Dangane da wannan ma'auni, za'a iya warware iyakar ƙarfin wutar lantarki na tsarin, wanda yake daidai da I2 × RDS (ON) ta ma'anar. Tun da mai zane ya ƙayyade iyakar halin yanzu da zai wuce ta na'urar, RDS(ON) za a iya ƙididdige shi a yanayin zafi daban-daban. Ya kamata a lura cewa lokacin da ake hulɗa da samfurori masu sauƙi na thermal, masu zanen kaya dole ne su yi la'akari da ƙarfin zafin jiki na mahaɗin semiconductor / na'ura da akwati / yanayi; wannan yana buƙatar cewa bugu na allon kewayawa da kunshin kada su yi zafi nan da nan. Rushewar dusar ƙanƙara yana nufin cewa jujjuya wutar lantarki akan na'urar semiconductor ya zarce matsakaicin ƙima kuma yana samar da filin lantarki mai ƙarfi don ƙara ƙarfin halin yanzu a cikin na'urar. Wannan halin yanzu zai ɓata wuta, ƙara yawan zafin na'urar, kuma yana iya lalata na'urar. Kamfanonin Semiconductor za su gudanar da gwajin dusar ƙanƙara a kan na'urori, ƙididdige ƙarfin wutar lantarkin su, ko gwada ƙarfin na'urar. Akwai hanyoyi guda biyu don ƙididdige ƙimar wutar lantarki da aka ƙididdigewa; daya shine hanyar ƙididdiga kuma ɗayan shine lissafin thermal. Ana amfani da lissafin zafin jiki sosai saboda ya fi aiki. Yawancin kamfanoni sun ba da cikakkun bayanai game da gwajin na'urar su. Misali, Fairchild Semiconductor yana bada "Power MOSFET Avalanche Guidelines" (Power MOSFET Avalanche Guidelines-ana iya saukewa daga gidan yanar gizon Fairchild). Baya ga na'ura mai kwakwalwa, fasaha kuma tana da babban tasiri akan tasirin avalanche. Misali, haɓakar girman mutuƙar yana ƙara juriyar ƙazamar ruwa kuma a ƙarshe yana ƙara ƙarfin na'urar. Ga masu amfani na ƙarshe, wannan yana nufin amfani da manyan fakiti a cikin tsarin.
Mataki 4: Ƙayyade aikin sauyawa
Mataki na ƙarshe na zaɓin MOSFET shine tantance aikin sauya fasalin MOSFET. Akwai sigogi da yawa waɗanda ke shafar aikin sauyawa, amma mafi mahimmanci shine ƙofar / magudanar ruwa, kofa / tushe da magudanar ruwa / iyawar tushen. Wadannan capacitors suna haifar da asarar sauyawa a cikin na'urar saboda ana cajin su duk lokacin da suka canza. Don haka an rage saurin sauyawa na MOSFET, kuma an rage ingancin na'urar. Don ƙididdige yawan asarar da ke cikin na'ura yayin sauyawa, dole ne mai zane ya ƙididdige asarar yayin kunnawa (Eon) da asarar yayin kashewa (Eoff). Za'a iya bayyana jimlar ikon sauya MOSFET ta ma'auni mai zuwa: Psw=(Eon+Eoff)× mitar sauyawa. Cajin ƙofar (Qgd) yana da mafi girman tasiri akan sauya aikin. Dangane da mahimmancin aikin sauya fasalin, ana ci gaba da haɓaka sabbin fasahohi don magance wannan matsalar sauyawa. Ƙara girman guntu yana ƙara cajin ƙofar; wannan yana ƙara girman na'urar. Don rage asarar sauyawa, sabbin fasahohi irin su tashoshi mai kauri na kasa oxygen sun fito, suna nufin rage cajin kofa. Misali, sabuwar fasaha ta SuperFET na iya rage asarar gudanarwa da inganta aikin sauyawa ta rage RDS(ON) da cajin kofa (Qg). Ta wannan hanyar, MOSFETs na iya jure wa masu saurin wutar lantarki mai sauri (dv/dt) da masu wucewa na yanzu (di/dt) yayin sauyawa, har ma suna iya aiki da dogaro a mafi girman mitoci.
Lokacin aikawa: Oktoba-23-2023
