Metal-Oxide-SemICconductor tsarin na crystal transistor wanda aka fi sani daMOSFET, inda MOSFETs aka raba zuwa P-type MOSFETs da N-type MOSFETs. Hanyoyin da aka haɗa da MOSFET kuma ana kiran su MOSFET hadedde da'irori, da kuma MOSFET hadedde da'irori masu alaƙa da suka ƙunshi PMOSFETs daNMOSFETs ana kiran su CMOSFET hadedde da'irori.
MOSFET mai kunshe da nau'in p-type da wuraren yada n-n guda biyu tare da ƙimar taro mai girma ana kiransa tashar n-channel.MOSFET, kuma tashar tashar da ke haifar da tashar tashar tashar tashar n-type ta haifar da hanyoyi masu yadawa a cikin hanyoyi guda biyu na n-fadi tare da ƙima mai girma lokacin da bututun ke gudana. MOSFETs masu kauri na n-channel suna da tashar n-tashar da ke haifar da tashoshi mai gudanarwa lokacin da aka ɗaga kyakkyawar manufa ta yadda zai yiwu a ƙofar kuma kawai lokacin da aikin tushen ƙofar yana buƙatar ƙarfin aiki wanda ya wuce ƙarfin ƙarfin kofa. MOSFETs na n-channel su ne waɗanda ba su shirya zuwa ƙarfin wutar ƙofa ba (aikin tushen ƙofar yana buƙatar ƙarfin aiki na sifili). MOSFET hasken n-channel MOSFET shine tashar n-tashar MOSFET wanda ke haifar da tashar gudanarwa lokacin da wutar lantarki ta ƙofar (tushen ƙofa mai aiki da buƙatun ƙarfin aiki ba shi da sifili) ba a shirya ba.
NMOSFET hadedde da'irori su ne N-tashar MOSFET samar da wutar lantarki, NMOSFET hadedde da'irori, da shigarwar juriya yana da girma sosai, mafi yawan ba dole ba ne su narkar da sha na wutar lantarki, don haka CMOSFET da NMOSFET hadedde da'irori da aka haɗa ba tare da sun shiga ciki ba. lissafin nauyin kwararar wutar lantarki.NMOSFET hadedde da'irori, mafi yawan zaɓi na rukuni-rukuni guda ɗaya tabbataccen sauya wutar lantarki da ke samar da wutar lantarki. 9V fiye. CMOSFET hadedde da'irori kawai suna buƙatar amfani da da'irar samar da wutar lantarki iri ɗaya kamar yadda na'urorin haɗin gwiwar NMOSFET, za a iya haɗa su tare da haɗin gwiwar NMOSFET nan da nan. Duk da haka, daga NMOSFET zuwa CMOSFET nan da nan da alaka, saboda NMOSFET fitarwa-up juriya bai kai CMOSFET hadedde kewayawa keyed ja-up juriya, don haka kokarin amfani da yuwuwar bambancin jan-up resistor R, darajar resistor R ne. gabaɗaya 2 zuwa 100KΩ.
Gina N-channel masu kauri MOSFETs
A kan nau'in siliki na nau'in P tare da ƙananan ƙimar maida hankali, an yi yankuna N guda biyu tare da ƙimar maida hankali mai girma, kuma ana zana na'urori biyu daga ƙarfe na aluminum don zama magudanar d da tushen s, bi da bi.
Sa'an nan a cikin semiconductor bangaren surface masking wani bakin ciki Layer na silica insulating tube, a cikin magudana - tushen insulating tube tsakanin magudana da tushen wani aluminum lantarki, kamar yadda kofa g.
A cikin substrate kuma fitar da wani lantarki B, wanda ya ƙunshi MOSFET mai kauri mai kauri na N-tashar. MOSFET tushen da substrate gabaɗaya an haɗa su tare, yawancin bututun da ke cikin masana'anta an daɗe ana haɗa shi da shi, ƙofarsa da sauran na'urorin lantarki suna keɓance tsakanin cakuɗa.
Lokacin aikawa: Mayu-26-2024
