"MOSFET" shine takaitaccen bayanin Metal Oxide Semicoductor Field Effect Transistor. Na'ura ce da aka yi da abubuwa uku: ƙarfe, oxide (SiO2 ko SiN) da kuma semiconductor. MOSFET yana ɗaya daga cikin na'urori masu mahimmanci a cikin filin semiconductor. Ko yana cikin ƙirar IC ko aikace-aikacen kewaya matakin matakin allo, yana da yawa sosai. Babban sigogi na MOSFET sun haɗa da ID, IDM, VGSS, V(BR) DSS, RDS(on), VGS(th), da sauransu. Kun san waɗannan? OLUKEY Company, a matsayin winsok Taiwan tsakiyar-zuwa-high-karshen matsakaici da ƙananan ƙarfin lantarkiMOSFETmai bada sabis na wakili, yana da ƙwararrun ƙungiyar tare da kusan shekaru 20 na gwaninta don bayyana muku dalla-dalla sigogi daban-daban na MOSFET!
Bayanin ma'anar sigogin MOSFET
1. Matsanancin sigogi:
ID: Matsakaicin magudanar ruwa-tushen halin yanzu. Yana nufin iyakar halin yanzu da aka yarda ya wuce tsakanin magudanar ruwa da tushen lokacin da transistor tasirin filin ke aiki akai-akai. Wurin aiki na transistor tasirin filin bai kamata ya wuce ID ba. Wannan siga yana raguwa yayin da yanayin haɗin gwiwa ke ƙaruwa.
IDM: Matsakaicin magudanar ruwa-tushen halin yanzu. Wannan siga zai ragu yayin da zafin mahaɗin yana ƙaruwa, yana nuna juriyar tasiri kuma yana da alaƙa da lokacin bugun jini. Idan wannan siga ya yi ƙanƙanta, tsarin na iya zama cikin haɗarin rushewa ta halin yanzu yayin gwajin OCP.
PD: Matsakaicin iko ya ɓace. Yana nufin iyakar magudanar ruwa-tushen wutar lantarki da aka yarda ba tare da tabarbarewar aikin transistor tasirin filin ba. Lokacin amfani da, ainihin amfani da wutar lantarki na FET yakamata ya zama ƙasa da na PDSM kuma ya bar wani gefe. Wannan siga gabaɗaya yana raguwa yayin da zafin mahaɗin yana ƙaruwa
VDSS: Matsakaicin magudanar ruwa-mafi ƙarfin ƙarfin lantarki. Wutar wutar lantarki-tushen magudanar ruwa lokacin da magudanar ruwa mai gudana ya kai wani takamaiman ƙima (tafi da ƙarfi) ƙarƙashin takamaiman zafin jiki da gajeriyar da'ira ta tushen ƙofar. Magudanar ruwa-tushen wutar lantarki a cikin wannan yanayin kuma ana kiranta ƙarfin rushewar ƙazafi. VDSS yana da ingantaccen adadin zafin jiki. A -50°C, VDSS shine kusan 90% na wancan a 25°C. Saboda izinin da aka bari yawanci a samarwa na yau da kullun, ƙarancin wutar lantarki na MOSFET koyaushe yana girma fiye da ƙimar ƙimar ƙimar ƙima.
OLUKEYDumi Tukwici: Don tabbatar da amincin samfurin, a ƙarƙashin mafi munin yanayin aiki, ana ba da shawarar cewa ƙarfin ƙarfin aiki kada ya wuce 80 ~ 90% na ƙimar da aka ƙima.
VGSS: Madaidaicin tushen kofa mai jure wa wutar lantarki. Yana nufin ƙimar VGS lokacin da jujjuyawar halin yanzu tsakanin ƙofar da tushe ya fara ƙaruwa sosai. Wucewa wannan ƙimar ƙarfin lantarki zai haifar da rushewar dielectric Layer na gate oxide Layer, wanda shine ɓarna kuma ba zai iya jurewa ba.
TJ: Matsakaicin zafin mahaɗin aiki. Yawanci 150 ℃ ko 175 ℃. A ƙarƙashin yanayin aiki na ƙirar na'urar, ya zama dole don kauce wa ƙetare wannan zafin jiki kuma barin wani yanki.
TSTG: kewayon zafin ajiya
Waɗannan sigogi biyu, TJ da TSTG, suna daidaita kewayon zafin mahaɗin da yanayin aiki da na'urar ke ba da izini. An saita wannan kewayon zafin jiki don saduwa da mafi ƙarancin buƙatun rayuwar aiki na na'urar. Idan an tabbatar da cewa na'urar tana aiki a cikin wannan kewayon zafin jiki, za a tsawaita rayuwar aikinta sosai.
2. Matsaloli na tsaye
Yanayin gwajin MOSFET gabaɗaya 2.5V, 4.5V, da 10V.
V(BR) DSS: Magudanar ruwa-tushen wutar lantarki. Yana nufin matsakaicin matsakaicin ƙarfin magudanar ruwa wanda transistor tasirin filin zai iya jurewa lokacin da ƙarfin tushen tushen ƙofar VGS shine 0. Wannan ƙayyadaddun ma'auni ne, kuma ƙarfin aiki da ake amfani da shi akan transistor tasirin filin dole ne ya zama ƙasa da V(BR) DSS. Yana da halaye masu kyau na zafin jiki. Sabili da haka, ƙimar wannan siga a ƙarƙashin ƙananan yanayin zafi yakamata a ɗauki matsayin la'akarin aminci.
△V(BR) DSS/△Tj: Matsakaicin zafin wutar lantarki na rushewar magudanar ruwa, gabaɗaya 0.1V/℃
RDS(on): Ƙarƙashin wasu sharuɗɗan VGS (yawanci 10V), zafin haɗin gwiwa da magudanar ruwa, matsakaicin juriya tsakanin magudanar ruwa da tushen lokacin da MOSFET ta kunna. Yana da ma'auni mai mahimmanci wanda ke ƙayyade ikon da ake cinye lokacin da MOSFET ta kunna. Wannan siga gabaɗaya yana ƙaruwa yayin da zafin mahaɗin yana ƙaruwa. Don haka, ya kamata a yi amfani da ƙimar wannan siga a mafi girman zafin mahaɗin aiki don ƙididdige asarar da raguwar ƙarfin lantarki.
VGS(th): kunna wutan lantarki (wajan wuta). Lokacin da ƙarfin ikon sarrafa ƙofar waje VGS ya wuce VGS(th), juzu'in jujjuyawar magudanar ruwa da yankuna masu tushe suna samar da tashar da aka haɗa. A aikace-aikace, ƙarfin lantarki na ƙofar lokacin da ID yayi daidai da 1 mA a ƙarƙashin yanayin gajeriyar magudanar ruwa ana kiransa wutar lantarki mai kunnawa. Wannan siga gabaɗaya yana raguwa yayin da zafin mahaɗin yana ƙaruwa
IDSS: cikakken magudanar ruwa-tushen halin yanzu, magudanar ruwa a halin yanzu lokacin ƙarfin ƙarfin ƙofar VGS=0 da VDS ƙayyadaddun ƙima ne. Gabaɗaya a matakin microamp
IGSS: Kofar-source drive na yanzu ko baya na halin yanzu. Tunda shigar MOSFET yana da girma sosai, IGSS gabaɗaya yana cikin matakin nanoamp.
3. Matsaloli masu ƙarfi
gfs: transconductance. Yana nufin rabon canjin magudanar ruwa na halin yanzu zuwa canjin wutar lantarki na tushen ƙofar. Ma'auni ne na ƙarfin wutar lantarki na tushen ƙofar don sarrafa magudanar ruwa. Da fatan za a duba ginshiƙi don dangantakar canja wuri tsakanin gfs da VGS.
Qg: Jimlar iya cajin kofa. MOSFET na'urar tuƙi ce irin ta wutar lantarki. Tsarin tuki shine tsarin kafa tsarin wutar lantarki. Ana samun wannan ta hanyar cajin ƙarfin aiki tsakanin tushen kofa da magudanar kofa. Wannan al'amari za a tattauna dalla-dalla a kasa.
Qgs: Ƙarfin cajin tushen Ƙofar
Qgd: cajin ƙofar-zuwa-magudanar ruwa (la'akari da tasirin Miller). MOSFET na'urar tuƙi ce irin ta wutar lantarki. Tsarin tuki shine tsarin kafa tsarin wutar lantarki. Ana samun wannan ta hanyar cajin ƙarfin aiki tsakanin tushen kofa da magudanar kofa.
Td(on): lokacin jinkirin gudanarwa. Lokacin daga lokacin da ƙarfin shigarwar ya tashi zuwa 10% har VDS ya ragu zuwa 90% na girman girmansa.
Tr: lokacin tashi, lokacin fitarwar ƙarfin lantarki VDS ya ragu daga 90% zuwa 10% na girman girmansa.
Td(kashe): Lokacin jinkiri na kashewa, lokacin daga lokacin da ƙarfin shigarwar ya ragu zuwa 90% zuwa lokacin da VDS ya tashi zuwa 10% na ƙarfin kashe wutar lantarki.
Tf: Lokacin faɗuwa, lokacin fitarwar ƙarfin lantarki VDS zai tashi daga 10% zuwa 90% na girman girman sa.
Ciss: Ƙarfin shigar da bayanai, gajeriyar kewaya magudanar ruwa da tushen, kuma auna ƙarfin aiki tsakanin ƙofar da tushen tare da siginar AC. Ciss = CGD + CGS (CDS short circuit). Yana da tasiri kai tsaye akan kunnawa da jinkirin kashe na'urar.
Coss: ƙarfin fitarwa, gajeriyar kewaya ƙofar da tushen, kuma auna ƙarfin tsakanin magudanar ruwa da tushen tare da siginar AC. Coss = CDS +CGD
Crss: Reverse watsa capacitance. Tare da tushen da aka haɗa zuwa ƙasa, ƙarfin da aka auna tsakanin magudanar ruwa da ƙofar Crss=CGD. Ɗaya daga cikin mahimman sigogi don sauyawa shine lokacin tashi da faɗuwa. Crss=CGD
Matsakaicin ƙarfin interelectrode da MOSFET induced capacitance na MOSFET an raba su zuwa ƙarfin shigarwa, ƙarfin fitarwa da ƙarfin amsa ta yawancin masana'antun. Ƙimar da aka ambata don ƙayyadaddun wutar lantarki zuwa magudanar ruwa. Wadannan capacitances suna canzawa yayin da ƙarfin wutar lantarki na tushen magudanar ruwa ya canza, kuma ƙimar ƙarfin ƙarfin yana da iyakataccen tasiri. Ƙimar ƙarfin shigar da bayanai kawai yana ba da madaidaicin nuni na cajin da kewayar direba ke buƙata, yayin da bayanin cajin ƙofar ya fi amfani. Yana nuna adadin kuzarin da ƙofar dole ta yi caji don isa takamaiman ƙarfin wutan kofa zuwa tushen.
4. Avalanche rushewar halayen halayen
Siffar sifa ta rugujewar dusar ƙanƙara manuniya ce ta ikon MOSFET na jure wuce gona da iri a cikin jihar da ke waje. Idan wutar lantarki ta zarce ƙarfin magudanar ruwa-tushen wutar lantarki, na'urar zata kasance cikin yanayin ƙazamar ruwa.
EAS: bugun jini guda ɗaya na rushewar makamashi. Wannan ƙayyadaddun siga ce, yana nuna matsakaicin matsakaicin ƙarfin rushewar dusar ƙanƙara wanda MOSFET zata iya jurewa.
IAR: avalanche halin yanzu
KUNNE: Maimaituwar Ƙarfafawar Ƙarfafawar Ƙarfafawa
5. In vivo diode sigogi
IS: Ci gaba da matsakaicin matsakaicin motsi na yanzu (daga tushe)
ISM: Matsakaicin bugun motsa jiki na yanzu (daga tushe)
VSD: ƙaddamar da ƙarfin lantarki na gaba
Trr: Maimaita lokacin dawowa
Qrr: Maimaita cajin dawowa
Ton: Lokacin gabatarwa. (Babu komai)
MOSFET lokacin kunnawa da ma'anar lokacin kashewa
Yayin aiwatar da aikace-aikacen, yawanci ana buƙatar la'akari da halaye masu zuwa:
1. Ingantattun halayen halayen zafin jiki na V (BR) DSS. Wannan sifa, wacce ta bambanta da na'urorin bipolar, yana sa su zama mafi aminci yayin da yanayin yanayin aiki na yau da kullun ke ƙaruwa. Amma kuma kuna buƙatar kula da amincin sa yayin fara sanyi mai ƙarancin zafi.
2. Halayen ma'aunin zafin jiki mara kyau na V(GS) th. Matsakaicin iyakar ƙofar zai ragu zuwa wani matsayi yayin da zafin mahaɗin yana ƙaruwa. Wasu radiation kuma za su rage wannan yuwuwar yuwuwar, maiyuwa ma kasa da yuwuwar 0. Wannan fasalin yana buƙatar injiniyoyi su kula da tsangwama da haifar da ƙarya na MOSFETs a cikin waɗannan yanayi, musamman don aikace-aikacen MOSFET tare da ƙananan yuwuwar kofa. Saboda wannan siffa, wani lokaci ya zama dole don tsara ƙarfin kashe wutar lantarki na direban ƙofar zuwa ƙimar mara kyau (yana nufin nau'in N-type, nau'in P da sauransu) don guje wa tsangwama da tayar da ƙarya.
3.Positive zazzabi coefficient halaye na VDSon/RDSo. Halin da VDSon/RDSon ya ƙaru kaɗan yayin da yawan zafin jiki ya karu yana sa ya yiwu a yi amfani da MOSFETs kai tsaye a layi daya. Na'urorin Bipolar kawai akasin haka ne, don haka amfani da su a layi daya ya zama mai rikitarwa. RDSon kuma zai ƙaru kaɗan yayin da ID ke ƙaruwa. Wannan sifa da ingantattun halayen zafin jiki na junction da saman RDSon suna ba MOSFET damar guje wa rushewar na biyu kamar na'urorin bipolar. Koyaya, ya kamata a lura cewa tasirin wannan fasalin yana da iyaka. Lokacin da aka yi amfani da su a layi daya, turawa ko wasu aikace-aikace, ba za ka iya dogara gaba ɗaya ga tsarin kai na wannan fasalin ba. Har yanzu ana buƙatar wasu matakai na asali. Wannan yanayin kuma yana bayyana cewa asarar tafiyarwa ta zama mafi girma a yanayin zafi. Sabili da haka, ya kamata a biya kulawa ta musamman ga zaɓin sigogi lokacin ƙididdige hasara.
4. Halayen madaidaicin zafin jiki mara kyau na ID, fahimtar sigogin MOSFET da ainihin halayensa ID zai ragu sosai yayin da yawan zafin jiki ya karu. Wannan halayyar ta sa sau da yawa ya zama dole a yi la'akari da sigogin ID ɗin sa a babban yanayin zafi yayin ƙira.
5. Halayen ƙarancin zafin jiki mara kyau na iyawar avalanche IER/EAS. Bayan yawan zafin jiki na junction, ko da yake MOSFET zai sami mafi girma V (BR) DSS, ya kamata a lura cewa EAS za a rage muhimmanci. Wato ikonsa na jure dusar ƙanƙara a ƙarƙashin yanayin zafi mai zafi ya fi ƙarfinsa fiye da yanayin zafi na yau da kullun.
6. Ƙarfin sarrafawa da sake dawo da aikin parasitic diode a cikin MOSFET ba su da kyau fiye da na diodes na yau da kullum. Ba a tsammanin za a yi amfani da shi azaman babban mai ɗauka na yanzu a cikin madauki a cikin zane. Sau da yawa ana haɗa diodes masu toshewa a jere don ɓatar da diodes ɗin parasitic a cikin jiki, kuma ana amfani da ƙarin diodes masu kama da juna don samar da jigilar lantarki. Koyaya, ana iya la'akari da shi azaman mai ɗaukar hoto a cikin yanayin gudanarwa na ɗan gajeren lokaci ko wasu ƙananan buƙatun yanzu kamar gyaran aiki tare.
7. Saurin haɓakar yuwuwar magudanar ruwa na iya haifar da ɓacin rai-haɗaɗɗen tuƙin ƙofar, don haka ana buƙatar yin la'akari da wannan yuwuwar a cikin manyan aikace-aikacen dVDS/dt (maɗaukakin saurin sauyawa mai saurin mitoci).
Lokacin aikawa: Dec-13-2023
