MOSFET Anti-Reverse Circuit

Na farko, ainihin ka'idar MOSFET anti-reverse circuit

MOSFET anti-reverse circuit ta amfani da halayen sauyawa na MOSFET, ta hanyar sarrafa wutar lantarki ta ƙofar (G) don gane da'irar a kunne da kashewa. Lokacin da polarity na samar da wutar lantarki daidai ne, ƙarfin wutar lantarki yana sa MOSFET a cikin yanayin tafiyarwa, halin yanzu na iya gudana akai-akai; lokacin da aka juya polarity na wutar lantarki, ƙarfin wutar lantarki ba zai iya yin motsin MOSFET ba, don haka yanke da'ira.

Na biyu, takamaiman fahimtar MOSFET anti-reverse circuit

1. N-channel MOSFET anti-reverse kewaye

MOSFETs N-channel yawanci ana amfani da su don gane da'irori na gaba da baya. A cikin da'irar, tushen (S) na MOSFET N-channel an haɗa shi zuwa madaidaicin magudanar kaya, magudanar ruwa (D) an haɗa shi zuwa ingantaccen tashar wutar lantarki, kuma an haɗa ƙofar (G) zuwa gate. mummunan tashar wutar lantarki ta hanyar resistor ko sarrafawa ta hanyar sarrafawa.

Haɗin gaba: tabbataccen tashar wutar lantarki yana haɗa zuwa D, kuma an haɗa madaidaicin madaidaicin zuwa S. A wannan lokacin, resistor yana samar da wutar lantarki ta hanyar ƙofar (VGS) don MOSFET, kuma lokacin da VGS ya fi girma fiye da kofa. ƙarfin lantarki (Vth) na MOSFET, MOSFET yana gudana, kuma halin yanzu yana gudana daga tabbataccen tashar wutar lantarki zuwa kaya ta MOSFET.

Lokacin da aka juya baya: an haɗa madaidaicin tashar wutar lantarki zuwa S, kuma an haɗa madaidaicin tashar zuwa D. A wannan lokacin, MOSFET yana cikin yanayin yankewa kuma an cire kewaye don kare kaya daga lalacewa saboda ƙarfin ƙofar ƙofar. ba zai iya samar da isasshen VGS don yin halin MOSFET (VGS na iya zama ƙasa da 0 ko ƙasa da Vth).

2. Matsayin Abubuwan Agaji

Resistor: Ana amfani da shi don samar da wutar lantarki ta tushen ƙofar don MOSFET da iyakance halin yanzu na ƙofar don hana lalacewar kofa.

Mai sarrafa wutar lantarki: wani zaɓi na zaɓi da aka yi amfani da shi don hana ƙarfin wutar lantarki daga ƙofar kofa ya yi girma da rushe MOSFET.

Parasitic Diode: Diode parasitic (diode body) yana wanzuwa a cikin MOSFET, amma yawanci ana yin watsi da tasirinsa ta hanyar ƙirar da'ira don guje wa mummunan tasirinsa a cikin da'irar anti-reverse.

Na uku, fa'idodin MOSFET anti-reverse circuit

Ƙananan hasara: MOSFET akan juriya yana ƙarami, ƙarfin ƙarfin juriya yana raguwa, don haka asarar kewayawa kadan ne.

Babban abin dogaro: ana iya aiwatar da aikin anti-reverse ta hanyar ƙirar kewayawa mai sauƙi, kuma MOSFET kanta tana da babban abin dogaro.

Sassauci: Mofurori daban-daban na MOSFET da ƙirar da'ira za a iya zaɓar don biyan buƙatun aikace-aikace daban-daban.

Matakan kariya

A cikin ƙirar MOSFET anti-reverse circuit, kuna buƙatar tabbatar da cewa zaɓin MOSFET don biyan buƙatun aikace-aikacen, gami da ƙarfin lantarki, halin yanzu, saurin sauyawa da sauran sigogi.

Wajibi ne a yi la'akari da tasirin sauran abubuwan da ke cikin kewayawa, kamar ƙarfin ƙarfin parasitic, inductance parasitic, da dai sauransu, don kauce wa mummunan tasiri a kan aikin kewaye.

A aikace-aikace masu amfani, ana buƙatar isassun gwaji da tabbatarwa don tabbatar da kwanciyar hankali da amincin kewaye.

A taƙaice, da'irar anti-reverse MOSFET tsari ne mai sauƙi, abin dogaro da ƙarancin hasarar kariyar samar da wutar lantarki wanda ake amfani da shi sosai a aikace-aikace iri-iri waɗanda ke buƙatar rigakafin juzu'in wutar lantarki.