Cikakken bayani na zane-zane na aiki na MOSFET | Binciken tsarin ciki na FET

MOSFET yana ɗaya daga cikin mahimman abubuwan haɗin gwiwa a cikin masana'antar semiconductor. A cikin da'irori na lantarki, ana amfani da MOSFET gabaɗaya a cikin da'irar amplifier ko canza wutar lantarki kuma ana amfani dashi ko'ina. A ƙasa,OLUKEYzai ba ku cikakken bayani game da ƙa'idar aiki na MOSFET da kuma nazarin tsarin ciki na MOSFET.

MeneneMOSFET

MOSFET, Metal Oxide Semiconductor Filed Effect Transistor (MOSFET). Tasirin filin transistor ne wanda za'a iya amfani dashi ko'ina a cikin da'irori na analog da da'irori na dijital. Bisa ga bambancin polarity na "tashar" (mai ɗaukar aiki), ana iya raba shi zuwa nau'i biyu: "N-type" da "P-type", waɗanda galibi ana kiran su NMOS da PMOS.

MOSFET ka'idar aiki

Ana iya raba MOSFET zuwa nau'in haɓakawa da nau'in raguwa gwargwadon yanayin aiki. Nau'in haɓakawa yana nufin MOSFET lokacin da ba'a amfani da wutar lantarki na son zuciya kuma babu contashar tashar. Nau'in raguwa yana nufin MOSFET lokacin da ba a yi amfani da wutar lantarki ba. Tashar za ta bayyana.

A cikin ainihin aikace-aikacen, akwai nau'in haɓaka tashoshi N-tashar da nau'in haɓakawa na P-tashar MOSFETs. Tun da NMOSFETs suna da ƙananan juriya a kan-jihar kuma suna da sauƙin ƙirƙira, NMOS ya fi kowa fiye da PMOS a ainihin aikace-aikace.

Yanayin haɓaka MOSFET

Akwai mahaɗar PN guda biyu na baya-baya tsakanin magudanar ruwa D da tushen S na yanayin haɓakawa MOSFET. Lokacin da ƙarfin wutar lantarki na gate-source VGS=0, ko da an ƙara magudanar ruwa-source ƙarfin lantarki VDS, akwai ko da yaushe PN junction a cikin wani juyi mai son zuciya, kuma babu wani conductive tashar tsakanin magudanar da tushen (babu halin yanzu gudana). ). Saboda haka, lambatu na yanzu ID=0 a wannan lokacin.

A wannan lokacin, idan an ƙara ƙarfin wuta na gaba tsakanin ƙofar da tushen. Wato, VGS>0, sannan filin lantarki tare da ƙofar da ke daidaitawa da nau'in siliki na nau'in P-type za a samar da shi a cikin SiO2 insulating Layer tsakanin gate electrode da silicon substrate. Saboda Layer oxide yana rufewa, ƙarfin lantarki VGS da ake amfani da shi a ƙofar ba zai iya samar da halin yanzu ba. Ana samar da capacitor a bangarorin biyu na oxide Layer, kuma VGS daidai da kewaye yana cajin wannan capacitor (capacitor). Kuma samar da filin lantarki, yayin da VGS ke tashi a hankali, wanda ke jawo hankalin wutar lantarki mai kyau na ƙofar. Yawancin electrons sun taru a daya gefen wannan capacitor (capacitor) kuma suna ƙirƙirar tashar sarrafawa ta nau'in N daga magudanar ruwa zuwa tushe. Lokacin da VGS ya wuce kunna wutar lantarki VT na bututu (gaba ɗaya kusan 2V), bututun N-channel ya fara aiki, yana samar da ID na yanzu. Muna kiran wutar lantarki ta tushen ƙofar lokacin da tashar ta fara samar da wutar lantarki mai kunnawa. Gabaɗaya an bayyana shi azaman VT.

Sarrafa girman ƙarfin lantarki na ƙofar VGS yana canza ƙarfi ko rauni na filin lantarki, kuma ana iya samun tasirin sarrafa girman lambar ID na yanzu. Wannan kuma wani muhimmin fasali ne na MOSFETs da ke amfani da filayen lantarki don sarrafa halin yanzu, don haka ana kiran su transistor sakamako.

MOSFET Tsarin ciki

A kan nau'in siliki na nau'in P tare da ƙarancin ƙarancin ƙazanta, an yi yankuna N + guda biyu tare da ƙarancin ƙazanta, kuma ana zana na'urorin lantarki guda biyu daga aluminum na ƙarfe don zama magudanar d da tushen s bi da bi. Sa'an nan kuma an rufe saman semiconductor da wani Layer na silicon dioxide (SiO2) na bakin ciki sosai, kuma an sanya na'urar lantarki ta aluminum akan rufin da ke rufewa tsakanin magudanar ruwa da tushen don zama ƙofar g. Hakanan ana zana na'urar lantarki B akan ma'auni, yana samar da yanayin haɓaka-yanayin N-channel MOSFET. Haka yake ga samuwar ciki na P-tashar kayan haɓaka-nau'in MOSFETs.

N-channel MOSFET da P-tashar MOSFET alamomin kewaye

Hoton da ke sama yana nuna alamar kewayawa ta MOSFET. A cikin hoton, D shine magudanar ruwa, S shine tushen, G shine ƙofar, kibiya a tsakiya kuma tana wakiltar ƙasa. Idan kibiya tana nuni zuwa ciki, tana nuna tashar N-tashar MOSFET, kuma idan kibiya ta nuna waje, tana nuna tashar P-tashar MOSFET.

Dual N-channel MOSFET, MOSFET-tashar biyu P-tashar MOSFET da N+P-tashar MOSFET alamomin kewaye

A zahiri, yayin aikin masana'antar MOSFET, ana haɗa substrate zuwa tushen kafin barin masana'anta. Don haka, a cikin ƙa'idodin ƙa'idodin, alamar kibiya mai wakiltar ƙasa dole ne a haɗa shi da tushen don bambanta magudanar ruwa da tushen. Ƙarfin wutar lantarki da MOSFET ke amfani da shi yayi kama da transistor ɗin mu na gargajiya. N-channel yayi kama da transistor NPN. An haɗa magudanar ruwa D zuwa ingantaccen lantarki kuma an haɗa tushen S zuwa na'urar lantarki mara kyau. Lokacin da ƙofar G tana da ingantaccen ƙarfin lantarki, ana samar da tashar gudanarwa kuma MOSFET ta tashar N-ta fara aiki. Hakazalika, P-tashar yana kama da transistor PNP. An haɗa magudanar ruwa D zuwa na'urar da ba ta dace ba, tushen S yana haɗa da ingantaccen lantarki, kuma lokacin da ƙofar G yana da ƙarancin wutar lantarki, an kafa tashar gudanarwa kuma MOSFET ta tashar P-ta fara aiki.

MOSFET canza hasara

Ko NMOS ko PMOS, akwai juriya na ciki wanda aka haifar bayan an kunna shi, don haka na yanzu zai cinye makamashi akan wannan juriya na ciki. Wannan bangare na makamashin da ake amfani da shi ana kiransa amfani da wutar lantarki. Zaɓin MOSFET tare da ƙaramin juriya na ciki zai rage yawan amfani da sarrafawa yadda ya kamata. Juriya na cikin gida na MOSFET mai ƙarancin ƙarfi gabaɗaya yana kusa da dubun miliyoyi, kuma akwai kuma milliohms da yawa.

Lokacin da aka kunna MOS kuma an ƙare, ba dole ba ne a gane shi nan take. Wutar lantarki a ɓangarorin biyu na MOS za su sami raguwa mai tasiri, kuma halin da ke gudana ta cikinsa zai sami karuwa. A wannan lokacin, asarar MOSFET shine samfurin ƙarfin lantarki da na yanzu, wanda shine asarar canzawa. Gabaɗaya magana, hasara mai canzawa ta fi girma fiye da asarar sarrafawa, kuma saurin saurin mitar, mafi girman asarar.

Samfurin ƙarfin lantarki da na yanzu a lokacin gudanarwa yana da girma sosai, yana haifar da asara mai yawa. Ana iya rage asarar asarar ta hanyoyi biyu. Daya shine rage lokacin sauyawa, wanda zai iya rage asarar yadda ya kamata yayin kowane kunnawa; ɗayan kuma shine don rage yawan sauyawa, wanda zai iya rage yawan sauyawa a kowane lokaci.

Abin da ke sama cikakken bayani ne na zane-zanen ka'idar aiki na MOSFET da kuma nazarin tsarin ciki na MOSFET. Don ƙarin koyo game da MOSFET, maraba da tuntuɓar OLUKEY don ba ku tallafin fasaha na MOSFET!