Yin Nazari Ƙarfafawa da Ragewar MOSFETs

D-FET yana cikin ƙofofin ƙofa lokacin da kasancewar tashar, na iya gudanar da FET; E-FET yana cikin nuna son kai na 0 kofa lokacin da babu tashar, ba zai iya gudanar da FET ba. waɗannan nau'ikan FET guda biyu suna da nasu halaye da amfani. Gabaɗaya, haɓaka FET a cikin babban sauri, da'ira mara ƙarfi yana da matukar amfani; kuma wannan na'urar tana aiki, shine polarity na gate bias voltage da magudanar ruwa irin ƙarfin lantarki na iri ɗaya, ya fi dacewa a ƙirar kewaye.

Abin da ake kira haɓakawa yana nufin: lokacin da VGS = 0 tube ya zama yanki mai yankewa, tare da daidaitattun VGS, yawancin masu ɗaukar kaya suna sha'awar ƙofar, don haka "inganta" masu ɗaukar kaya a yankin, suna kafa tashar sarrafawa. MOSFET da aka haɓaka n-channel shine ainihin ƙirar simmetric na hagu-dama, wanda shine semiconductor na nau'in P akan haɓakar rufin fim ɗin SiO2. Yana haifar da rufin rufin fim ɗin SiO2 akan nau'in semiconductor na nau'in P, sannan ya watsa yankuna biyu na nau'in N-nau'in doped ta hanyar.daukar hoto, kuma yana jagorantar electrodes daga yankin N-type, daya don magudanar ruwa D kuma ɗaya don tushen S. Ƙarfe na aluminum yana daɗaɗɗen rufin rufin da ke tsakanin tushen da magudana a matsayin ƙofar G. Lokacin da VGS = 0 V. , akwai 'yan diodes da yawa tare da diodes na baya-baya tsakanin magudanar ruwa da tushen kuma ƙarfin da ke tsakanin D da S ba ya samar da halin yanzu tsakanin D da S. Yanzu tsakanin D da S ba a samuwa ta hanyar ƙarfin lantarki da ake amfani da shi ba. .

Lokacin da aka ƙara ƙarfin wutar lantarki, idan 0 <VGS <VGS (th), ta hanyar filin lantarki mai ƙarfi da aka kafa tsakanin ƙofar da substrate, ramukan polyon a cikin semiconductor na nau'in P kusa da ƙasa na ƙofar suna korar ƙasa, kuma wani bakin ciki raguwa Layer na korau ions bayyana; a lokaci guda kuma, zai jawo hankalin oligons da ke cikinsa don motsawa zuwa saman Layer, amma adadin yana da iyaka kuma bai isa ya samar da tashar tashar da ke sadarwa da magudanar ruwa da tushen ba, don haka har yanzu bai isa ga Samar da ID na yanzu ba. kara karuwa VGS, lokacin da VGS > VGS (th) (VGS (th) ana kiranta da kunna wutar lantarki), saboda a wannan lokacin wutar lantarkin gate ya yi ƙarfi sosai, a cikin nau'in nau'in semiconductor surface Layer kusa da kasan ƙofar da ke ƙasa da tarawar ƙari. electrons, zaku iya samar da rami, magudanar ruwa da tushen sadarwa. Idan an ƙara ƙarfin wutar lantarki na tushen magudanar ruwa a wannan lokacin, ana iya samar da magudanar halin yanzu ID. electrons a cikin tashar watsawa da aka kafa a ƙasan ƙofar, saboda ramin mai ɗaukar hoto tare da polarity na nau'in P-type semiconductor yana gaba, don haka ana kiran shi anti-type Layer. Yayin da VGS ke ci gaba da karuwa, ID zai ci gaba da karuwa. ID = 0 a VGS = 0V, kuma magudanar ruwa yana faruwa ne kawai bayan VGS> VGS(th), don haka, irin wannan MOSFET ana kiransa haɓaka MOSFET.

Alamar sarrafawa na VGS akan magudanar ruwa ana iya siffanta shi ta hanyar lanƙwasa iD = f(VGS(th))|VDS=const, wanda ake kira madaidaicin sifa, da girman gangara na madaidaicin sifa, gm, yana nuna ikon sarrafa magudanar ruwa ta hanyar ƙarfin tushen ƙofar. Girman gm shine mA/V, don haka gm kuma ana kiransa transconductance.