WSD75N12GDN56 N-tashar 120V 75A DFN5X6-8 WINSOK MOSFET

samfurori

WSD75N12GDN56 N-tashar 120V 75A DFN5X6-8 WINSOK MOSFET

taƙaitaccen bayanin:

Lambar Sashe:Saukewa: WSD75N12GDN56

BVDSS:120V

ID:75A

RDSON:6mΩ

Channel:N-channel

Kunshin:Saukewa: DFN5X6-8


Cikakken Bayani

Aikace-aikace

Tags samfurin

Bayanin samfurin WINSOK MOSFET

Wutar lantarki na WSD75N12GDN56 MOSFET shine 120V, na yanzu shine 75A, juriya shine 6mΩ, tashar tashar N-channel, kuma kunshin shine DFN5X6-8.

Yankunan aikace-aikacen WINSOK MOSFET

Kayan aikin likita MOSFET, drones MOSFET, PD samar da wutar lantarki MOSFET, LED wutan lantarki MOSFET, masana'antu kayan aiki MOSFET.

Filin aikace-aikacen MOSFETWINSOK MOSFET yayi daidai da sauran lambobin kayan alama

AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.

MOSFET sigogi

Alama

Siga

Rating

Raka'a

VDSS

Lantarki-zuwa-Source Voltage

120

V

VGS

Ƙofar-zuwa-Source Voltage

± 20

V

ID

1

Cigaban Ruwa na Ci gaba (Tc=25℃)

75

A

ID

1

Ci gaba da Ruwa na Yanzu (Tc=70℃)

70

A

IDM

Magudanar Ruwa a halin yanzu

320

A

IAR

Gudun bugun jini guda ɗaya na halin yanzu

40

A

EASA

Ƙwaƙwalwar bugun jini guda ɗaya

240

mJ

PD

Rashin Wutar Lantarki

125

W

TJ, Tstg

Junction na Aiki da Ma'ajiya Zazzabi

- 55 zuwa 150

TL

Matsakaicin zafin jiki don siyarwa

260

RθJC

Resistance thermal, Junction-to-Case

1.0

℃/W

RJA

Resistance thermal, Junction-to-Ambient

50

℃/W

 

Alama

Siga

Yanayin Gwaji

Min.

Buga

Max.

Raka'a

VDSS

Magudana zuwa Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙwara VGS=0V, ID=250µA

120

--

--

V

IDSS

Magudanar ruwa zuwa Tushen Leaka na Yanzu VDS = 120V, VGS= 0V

--

--

1

µA

IGSS(F)

Ƙofar zuwa Tushen Gabatarwa VGS =+20V

--

--

100

nA

IGSS(R)

Ƙofar zuwa Tushen Juya baya VGS = -20V

--

--

-100

nA

VGS (TH)

Ƙofar Ƙofar Wuta VDS=VGS, ID = 250µA

2.5

3.0

3.5

V

RDS(ON)1

Magudana-zuwa-Source Kan Juriya VGS=10V, ID=20A

--

6.0

6.8

gFS

Canjin Gabatarwa VDS=5V, ID=50A  

130

--

S

Ciss

Input Capacitance VGS = 0V VDS = 50V f =1.0MHz

--

4282

--

pF

Coss

Fitar Capacitance

--

429

--

pF

Crss

Reverse Canja wurin Capacitance

--

17

--

pF

Rg

Juriya na Ƙofar

--

2.5

--

Ω

td (ON)

Lokacin Jinkirin Kunnawa

ID = 20A VDS = 50V VGS =

10V RG = 5Ω

--

20

--

ns

tr

Lokacin Tashi

--

11

--

ns

td (KASHE)

Lokacin Jinkirta Kashewa

--

55

--

ns

tf

Lokacin Faduwa

--

28

--

ns

Qg

Jimlar Cajin Ƙofar VGS = 0 ~ 10V VDS = 50VID = 20 A

--

61.4

--

nC

Qgs

Cajin Tushen Ƙofar

--

17.4

--

nC

Qgd

Cajin Ruwan Ƙofar

--

14.1

--

nC

IS

Diode Forward Yanzu TC = 25 ° C

--

--

100

A

ISM

Diode Pulse na yanzu

--

--

320

A

VSD

Diode Forward Voltage IS=6.0A, VGS=0V

--

--

1.2

V

trr

Juya lokacin farfadowa IS=20A, VDD=50V dIF/dt=100A/μs

--

100

--

ns

Qrr

Juya Cajin Farfadowa

--

250

--

nC


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