WSD75100DN56 N-tashar 75V 100A DFN5X6-8 WINSOK MOSFET

samfurori

WSD75100DN56 N-tashar 75V 100A DFN5X6-8 WINSOK MOSFET

taƙaitaccen bayanin:

Lambar Sashe:Saukewa: WSD75100DN56

BVDSS:75V

ID:100A

RDSON:5.3mΩ 

Channel:N-channel

Kunshin:Saukewa: DFN5X6-8


Cikakken Bayani

Aikace-aikace

Tags samfurin

Bayanin samfurin WINSOK MOSFET

Wutar lantarki na WSD75100DN56 MOSFET shine 75V, na yanzu shine 100A, juriya shine 5.3mΩ, tashar tashar N-channel, kuma kunshin shine DFN5X6-8.

Yankunan aikace-aikacen WINSOK MOSFET

MOSFET sigari e-cigare, cajin mara waya MOSFET, drones MOSFET, kula da lafiya MOSFET, caja mota MOSFET, MOSFET masu sarrafawa, samfuran dijital MOSFET, ƙananan kayan gida MOSFET, na'urorin lantarki MOSFET.

WINSOK MOSFET yayi daidai da sauran lambobin kayan alama

AOS MOSFET AON6276,AON6278,AON628,AON6282,AON6448.Onsemi,FAIRCHILD MOSFET NVMFS6H824N.STMicroelectronics MOSFET STL1N8F7.INFINEON,IR MOSFET BSC42NE7NS3NESP6 .

MOSFET sigogi

Alama

Siga

Rating

Raka'a

VDS

Matsala-Source Voltage

75

V

VGS

Gate-Sourda Voltage

±25

V

TJ

Matsakaicin Yanayin Junction

150

°C

ID

Ma'ajiya Yanayin Zazzabi

- 55 zuwa 150

°C

IS

Diode Ci gaba na Gaba Yanzu,TC=25°C

50

A

ID

Ci gaba da Ruwa na Yanzu, VGS= 10V, TC=25°C

100

A

Ci gaba da Ruwa na Yanzu, VGS= 10V, TC=100°C

73

A

IDM

Pulsed Drain Yanzu ,TC=25°C

400

A

PD

Matsakaicin Rushewar Wuta,TC=25°C

155

W

Matsakaicin Rushewar Wuta,TC=100°C

62

W

RJA

Juyin Juriya na thermal-Junction to Ambient ,t =10s ̀

20

°C

Thermal Resistance-Junction to Ambient ,Steady State

60

°C

RqJC

Juriya na thermal-Junction zuwa Case

0.8

°C

IAS

Avalanche na yanzu, bugun jini guda ɗaya, L=0.5mH

30

A

EAS

Avalanche Energy, bugun jini guda ɗaya, L=0.5mH

225

mJ

 

Alama

Siga

Sharuɗɗa

Min.

Buga

Max.

Naúrar

BVDSS

Matsala-Source Breakdown Voltage VGS= 0, ID= 250 UA

75

---

---

V

BVDSS/△TJ

BVDSSYawan zafin jiki Magana zuwa 25, ID= 1mA

---

0.043

---

V/

RDS(ON)

A tsaye Magudanar Ruwa Kan Juriya2 VGS=10V, ID= 25 A

---

5.3

6.4

mΩ

VGS(th)

Ƙofar Ƙofar Wuta VGS=VDS, ID= 250 UA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Yawan zafin jiki

---

-6.94

---

mV/

IDSS

Matsala-Source Leaka Yanzu VDS= 48, VGS= 0, TJ=25

---

---

2

uA

VDS= 48, VGS= 0, TJ=55

---

---

10

IGSS

Ciwon Kofa-Source Yanzu VGS=±20V, kuDS= 0V

---

---

±100

nA

gfs

Canjin Gabatarwa VDS= 5V, inaD= 20 A

---

50

---

S

Rg

Ƙofar Juriya VDS= 0V, kuGS= 0V, f=1MHz

---

1.0

2

Ω

Qg

Jimlar Cajin Ƙofar (10V) VDS= 20, VGS= 10V, ID= 40 A

---

65

85

nC

Qgs

Cajin Gate-Source

---

20

---

Qgd

Cajin Kofa-Drain

---

17

---

Td(na)

Lokacin Jinkirin Kunnawa VDD= 30, VGEN= 10V, RG=1Ω, ID= 1A, RL=15Ω.

---

27

49

ns

Tr

Lokacin Tashi

---

14

26

Td (kashe)

Lokacin Jinkirta Kashewa

---

60

108

Tf

Lokacin Faduwa

---

37

67

Ciss

Input Capacitance VDS= 20, VGS= 0V, f=1MHz

3450

3500 4550

pF

Coss

Fitar Capacitance

245

395

652

Crss

Reverse Canja wurin Capacitance

100

195

250


  • Na baya:
  • Na gaba:

  • Ku rubuta sakonku anan ku aiko mana