WSD6070DN56 N-tashar 60V 80A DFN5X6-8 WINSOK MOSFET

samfurori

WSD6070DN56 N-tashar 60V 80A DFN5X6-8 WINSOK MOSFET

taƙaitaccen bayanin:

Lambar Sashe:Saukewa: WSD6070DN56

BVDSS:60V

ID:80A

RDSON:7.3mΩ 

Channel:N-channel

Kunshin:Saukewa: DFN5X6-8


Cikakken Bayani

Aikace-aikace

Tags samfurin

Bayanin samfurin WINSOK MOSFET

Wutar lantarki na WSD6070DN56 MOSFET shine 60V, na yanzu shine 80A, juriya shine 7.3mΩ, tashar tashar N-channel, kuma kunshin shine DFN5X6-8.

Yankunan aikace-aikacen WINSOK MOSFET

MOSFET e-cigare, cajin mara waya MOSFET, Motors MOSFET, drones MOSFET, kula da lafiya MOSFET, caja mota MOSFET, masu sarrafawa MOSFET, samfuran dijital MOSFET, ƙananan kayan gida MOSFET, na'urorin lantarki MOSFET.

WINSOK MOSFET yayi daidai da sauran lambobin kayan alama

POTENS Semiconductor MOSFET PDC696X.

MOSFET sigogi

Alama

Siga

Rating

Raka'a

VDS

Matsala-Source Voltage

60

V

VGS

Gate-Sourda Voltage

±20

V

TJ

Matsakaicin Yanayin Junction

150

°C

ID

Ma'ajiya Yanayin Zazzabi

- 55 zuwa 150

°C

IS

Diode Ci gaba na Gaba Yanzu,TC=25°C

80

A

ID

Ci gaba da Ruwa na Yanzu, VGS= 10V, TC=25°C

80

A

Ci gaba da Ruwa na Yanzu, VGS= 10V, TC=100°C

66

A

IDM

Pulsed Drain Yanzu ,TC=25°C

300

A

PD

Matsakaicin Rashin Wutar Lantarki,TC=25°C

150

W

Matsakaicin Rashin Wutar Lantarki,TC=100°C

75

W

RJA

Juyin Juriya na thermal-Junction to Ambient ,t =10s ̀

50

°C/W

Thermal Resistance-Junction to Ambient ,Steady State

62.5

°C/W

RqJC

Juriya na thermal-Junction zuwa Case

1

°C/W

IAS

Avalanche na yanzu, bugun jini guda ɗaya, L=0.5mH

30

A

EAS

Avalanche Energy, bugun jini guda daya, L=0.5mH

225

mJ

 

Alama

Siga

Sharuɗɗa

Min.

Buga

Max.

Naúrar

BVDSS

Matsala-Source Breakdown Voltage VGS= 0, ID= 250 UA

60

---

---

V

BVDSS/△TJ

BVDSSYawan zafin jiki Magana zuwa 25, ID= 1mA

---

0.043

---

V/

RDS(ON)

A tsaye Magudanar Ruwa Kan Juriya2 VGS=10V, ID= 40 A

---

7.0

9.0

mΩ

VGS(th)

Ƙofar Ƙofar Wuta VGS=VDS, ID= 250 UA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Yawan zafin jiki

---

-6.94

---

mV/

IDSS

Matsala-Source Leaka Yanzu VDS= 48, VGS= 0, TJ=25

---

---

2

uA

VDS= 48, VGS= 0, TJ=55

---

---

10

IGSS

Ciwon Kofa-Source Yanzu VGS=±20V, kuDS= 0V

---

---

±100

nA

gfs

Canjin Gabatarwa VDS= 5V, inaD= 20 A

---

50

---

S

Rg

Ƙofar Juriya VDS= 0V, kuGS= 0V, f=1MHz

---

1.0

---

Ω

Qg

Jimlar Cajin Ƙofar (10V) VDS= 30, VGS= 10V, ID= 40 A

---

48

---

nC

Qgs

Cajin Gate-Source

---

17

---

Qgd

Cajin Kofa-Drain

---

12

---

Td(na)

Lokacin Jinkirin Kunnawa VDD= 30, VGEN= 10V, RG=1Ω, ID= 1A, RL=15Ω.

---

16

---

ns

Tr

Lokacin Tashi

---

10

---

Td (kashe)

Lokacin Jinkirta Kashewa

---

40

---

Tf

Lokacin Faduwa

---

35

---

Ciss

Input Capacitance VDS= 30, VGS= 0V, f=1MHz

---

2680

---

pF

Coss

Fitar Capacitance

---

386

---

Crss

Reverse Canja wurin Capacitance

---

160

---


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