WSD6060DN56 N-tashar 60V 65A DFN5X6-8 WINSOK MOSFET

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Lambar Sashe:Saukewa: WSD6060DN56

BVDSS:60V

ID:65A

RDSON:7.5mΩ

Channel:N-channel

Kunshin:Saukewa: DFN5X6-8

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Bayanin samfurin WINSOK MOSFET

Wutar lantarki na WSD6060DN56 MOSFET shine 60V, na yanzu shine 65A, juriya shine 7.5mΩ, tashar tashar N-channel, kuma kunshin shine DFN5X6-8.

Yankunan aikace-aikacen WINSOK MOSFET

MOSFET e-cigare, cajin mara waya MOSFET, Motors MOSFET, drones MOSFET, kula da lafiya MOSFET, caja mota MOSFET, masu sarrafawa MOSFET, samfuran dijital MOSFET, ƙananan kayan gida MOSFET, na'urorin lantarki MOSFET.

WINSOK MOSFET yayi daidai da sauran lambobin kayan alama

STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.

MOSFET sigogi

Alama	Siga		Rating	Naúrar
Ƙididdigar gama gari
VDSS	Matsala-Source Voltage		60	V
VGSS	Ƙofar-Source Voltage		± 20	V
T_J	Matsakaicin Yanayin Junction		150	°C
TSTG	Ma'ajiya Yanayin Zazzabi		- 55 zuwa 150	°C
I_S	Diode Cigaban Gaba na Yanzu	T_c=25°C	30	A
ID	Ci gaba da Magudanar Ruwa a halin yanzu	T_c=25°C	65	A
ID	Ci gaba da Magudanar Ruwa a halin yanzu	T_c=70°C	42	A
Ina DM b	Pulse Drain Gwajin Yanzu	T_c=25°C	250	A
P_D	Matsakaicin Rushewar Wuta	T_c=25°C	62.5	W
P_D	Matsakaicin Rushewar Wuta	T_C=70°C	38	W
R_qJL	Juriya na thermal-Junction zuwa jagora	Jiha Tsaye	2.1	°C/W
RqJA	Ƙarfafa Ƙarfafa-Maɗaukaki zuwa Ƙaƙwalwar yanayi	t £ 10s	45	°C/W
RqJA	Ƙarfafa Ƙarfafa-Maɗaukaki zuwa Ƙaƙwalwar yanayi	Jiha Tsaye^b	50	°C/W
Ina AS^d	Avalanche Yanzu, bugun jini guda ɗaya	L=0.5mH	18	A
E AS d	Avalanche Energy, bugun jini guda ɗaya	L=0.5mH	81	mJ

Alama	Siga	Yanayin Gwaji		Min.	Buga	Max.	Naúrar
Halayen A tsaye
BV_DSS	Matsala-Source Breakdown Voltage	V_GS= 0, I_DS=250mA		60	-	-	V
IDSS	Ƙofar Zero Voltage Magudanar Ruwa na Yanzu	V_DS= 48, V_GS= 0V		-	-	1	mA
IDSS	Ƙofar Zero Voltage Magudanar Ruwa na Yanzu						mA
			T_J=85°C	-	-	30
VGS(th)	Ƙofar Ƙofar Wuta	V_DS=V_GS, I_DS=250mA		1.2	1.5	2.5	V
IGSS	Leakawar Ƙofar Yanzu	V_GS= 20V, V_DS= 0V		-	-	± 100	nA
R DS(ON) 3	Magudanar ruwa-Source Juriya kan-jihar	V_GS= 10V, I_DS= 20 A		-	7.5	10	m W
R DS(ON) 3	Magudanar ruwa-Source Juriya kan-jihar	V_GS= 4.5V, I_DS= 15 A		-	10	15	m W
Halayen Diode
V SD	Diode Forward Voltage	I_SD= 1 A, V_GS= 0V		-	0.75	1.2	V
t_rr	Juya Lokacin farfadowa	I_SD= 20 A, dl_SD/dt=100A/µs		-	42	-	ns
Q_rr	Juya Cajin Farfadowa	I_SD= 20 A, dl_SD/dt=100A/µs		-	36	-	nC
Halaye masu ƙarfi^3,4
R_G	Ƙofar Juriya	V_GS= 0,V_DS= 0V,F=1MHz		-	1.5	-	W
C_iss	Input Capacitance	V_GS= 0V, V_DS= 30V, F=1.0MHz Ω		-	1340	-	pF
C_oss	Fitar Capacitance			-	270	-
C_rss	Reverse Canja wurin Capacitance			-	40	-
td (ON)	Lokacin Jinkirin Kunnawa	VDD=30V, IDS=1A, VGEN=10V, RG=6Ω.		-	15	-	ns
t_r	Kunna Lokacin Tashi			-	6	-
td (KASHE)	Lokacin Jinkirin Kashewa			-	33	-
t_f	Kashe Fall Time			-	30	-
Halayen Cajin Ƙofar ^3,4
Q_g	Jimlar Cajin Ƙofar	V_DS= 30V, V_GS= 4.5V, I_DS= 20 A		-	13	-	nC
Q_g	Jimlar Cajin Ƙofar	V_DS= 30, V_GS= 10V, I_DS= 20 A		-	27	-
Q_gth	Cajin Ƙofar Kofa			-	4.1	-
Q_gs	Cajin Gate-Source			-	5	-
Q_gd	Cajin Kofa-Drain			-	4.2	-