WSD6040DN56 N-tashar 60V 36A DFN5X6-8 WINSOK MOSFET

samfurori

WSD6040DN56 N-tashar 60V 36A DFN5X6-8 WINSOK MOSFET

taƙaitaccen bayanin:

Lambar Sashe:Saukewa: WSD6040DN56

BVDSS:60V

ID:36 A

RDSON:14mΩ 

Channel:N-channel

Kunshin:Saukewa: DFN5X6-8


Cikakken Bayani

Aikace-aikace

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Bayanin samfurin WINSOK MOSFET

Wutar lantarki na WSD6040DN56 MOSFET shine 60V, na yanzu shine 36A, juriya shine 14mΩ, tashar tashar N-channel, kuma kunshin shine DFN5X6-8.

Yankunan aikace-aikacen WINSOK MOSFET

MOSFET e-cigare, cajin mara waya MOSFET, Motors MOSFET, drones MOSFET, kula da lafiya MOSFET, caja mota MOSFET, masu sarrafawa MOSFET, samfuran dijital MOSFET, ƙananan kayan gida MOSFET, na'urorin lantarki MOSFET.

WINSOK MOSFET yayi daidai da sauran lambobin kayan alama

AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.PANJIT MOSFET PSMQC12N6LS1.POTENS Semiconductor MOSFET PDC6964X.

MOSFET sigogi

Alama

Siga

Rating

Raka'a

VDS

Matsala-Source Voltage

60

V

VGS

Ƙofar-Source Voltage

± 20

V

ID

Ci gaba da Magudanar Ruwa a halin yanzu TC=25°C

36

A

TC=100°C

22

ID

Ci gaba da Magudanar Ruwa a halin yanzu TA=25°C

8.4

A

TA=100°C

6.8

IDMa

Magudanar Ruwa a halin yanzu TC=25°C

140

A

PD

Matsakaicin Rushewar Wuta TC=25°C

37.8

W

TC=100°C

15.1

PD

Matsakaicin Rushewar Wuta TA=25°C

2.08

W

TA=70°C

1.33

IAS c

Avalanche Yanzu, bugun jini guda ɗaya

L=0.5mH

16

A

EASc

Single Pulse Avalanche Energy

L=0.5mH

64

mJ

IS

Diode Cigaban Gaba na Yanzu

TC=25°C

18

A

TJ

Matsakaicin Yanayin Junction

150

TSTG

Ma'ajiya Yanayin Zazzabi

- 55 zuwa 150

RJAb

Junction Resistance Thermal zuwa yanayi

Jiha Tsaye

60

/W

RθJC

Juriya na thermal-Junction zuwa Case

Jiha Tsaye

3.3

/W

 

Alama

Siga

Sharuɗɗa

Min.

Buga

Max.

Naúrar

A tsaye        

V (BR) DSS

Matsala-Source Breakdown Voltage

VGS = 0V, ID = 250μA

60    

V

IDSS

Ƙofar Zero Voltage Magudanar Ruwa na Yanzu

VDS = 48 V, VGS = 0V

   

1

µA

 

TJ=85°C

   

30

IGSS

Leakawar Ƙofar Yanzu

VGS = ± 20V, VDS = 0V

    ± 100

nA

Akan Halaye        

VGS (TH)

Ƙofar Ƙofar Wuta

VGS = VDS, IDS = 250µA

1

1.6

2.5

V

RDS(na)d

Magudanar ruwa-Source Juriya kan-jihar

VGS = 10V, ID = 25A

  14 17.5

VGS = 4.5V, ID = 20A

  19

22

Canjawa        

Qg

Jimlar Cajin Ƙofar

VDS=30V

VGS=10V

ID=25A

  42  

nC

Qgs

Cajin Kofa-Sour  

6.4

 

nC

Qgd

Cajin Kofa-Drain  

9.6

 

nC

td (na)

Lokacin Jinkirin Kunnawa

VGEN=10V

VDD=30V

ID=1A

RG=6Ω

RL=30Ω

  17  

ns

tr

Kunna Lokacin Tashi  

9

 

ns

td (kashe)

Lokacin Jinkirin Kashewa   58  

ns

tf

Kashe Fall Time   14  

ns

Rg

Gat juriya

VGS=0V, VDS=0V, f=1MHz

 

1.5

 

Ω

Mai ƙarfi        

Ciss

A cikin Capacitance

VGS=0V

VDS=30V f=1MHz

 

2100

 

pF

Coss

A waje Capacitance   140  

pF

Crss

Reverse Canja wurin Capacitance   100  

pF

Halayen Diode-Source da Matsakaicin Matsakaicin        

IS

Tushen Ci gaba na Yanzu

VG=VD=0V , Force Current

   

18

A

ISM

Tushen Pulsed Current3    

35

A

VSDd

Diode Forward Voltage

ISD = 20A, VGS=0V

 

0.8

1.3

V

trr

Juya Lokacin farfadowa

ISD= 25 A, dlSD/dt=100A/µs

  27  

ns

Qrr

Juya Cajin Farfadowa   33  

nC


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