WSD30300DN56G N-tashar 30V 300A DFN5X6-8 WINSOK MOSFET

samfurori

WSD30300DN56G N-tashar 30V 300A DFN5X6-8 WINSOK MOSFET

taƙaitaccen bayanin:

Lambar Sashe:Saukewa: WSD30300DN56G

BVDSS:30V

ID:300A

RDSON:0.7mΩ 

Channel:N-channel

Kunshin:Saukewa: DFN5X6-8


Cikakken Bayani

Aikace-aikace

Tags samfurin

Bayanin samfurin WINSOK MOSFET

Wutar lantarki na WSD20100DN56 MOSFET shine 20V, na yanzu shine 90A, juriya shine 1.6mΩ, tashar tashar N-channel, kuma kunshin shine DFN5X6-8.

Yankunan aikace-aikacen WINSOK MOSFET

Sigari MOSFET, drones MOSFET, kayan aikin lantarki MOSFET, bindigogin fascia MOSFET, PD MOSFET, ƙananan kayan gida MOSFET.

WINSOK MOSFET yayi daidai da sauran lambobin kayan alama

AOS MOSFET AON6572.

POTENS Semiconductor MOSFET PDC394X.

MOSFET sigogi

Alama

Siga

Rating

Raka'a

VDS

Matsala-Source Voltage

20

V

VGS

Ƙofar-Source Voltage

± 12

V

ID@TC= 25 ℃

Ci gaba da Magudanar Ruwa a halin yanzu1

90

A

ID@TC= 100 ℃

Ci gaba da Magudanar Ruwa a halin yanzu1

48

A

IDM

Magudanar Ruwa a halin yanzu2

270

A

EAS

Single Pulse Avalanche Energy3

80

mJ

IAS

Avalanche Yanzu

40

A

PD@TC= 25 ℃

Jimlar Ƙarfin Wuta4

83

W

TSTG

Ma'ajiya Yanayin Zazzabi

- 55 zuwa 150

TJ

Tsawon Zazzabi Mai Aiki Junction

- 55 zuwa 150

RJA

Junction na thermal Resistance Junction-na yanayi1(t10S)

20

/W

RJA

Junction na thermal Resistance Junction-na yanayi1(Stady State)

55

/W

RθJC

Thermal Resistance Junction-case1

1.5

/W

 

Alama

Siga

Sharuɗɗa

Min

Buga

Max

Naúrar

BVDSS

Matsala-Source Breakdown Voltage VGS=0V, ID=250uA

20

23

---

V

VGS(th)

Ƙofar Ƙofar Wuta VGS=VDS, ID =250uA

0.5

0.68

1.0

V

RDS(ON)

A tsaye Magudanar Ruwa Kan Juriya2 VGS=10V, ID=20A

---

1.6

2.0

RDS(ON)

A tsaye Magudanar Ruwa Kan Juriya2 VGS=4.5V, ID=20A  

1.9

2.5

RDS(ON)

A tsaye Magudanar Ruwa Kan Juriya2 VGS=2.5V, ID=20A

---

2.8

3.8

IDSS

Matsala-Source Leaka Yanzu VDS=16V, VGS=0V, TJ=25

---

---

1

uA

VDS=16V, VGS=0V, TJ=125

---

---

5

IGSS

Ciwon Kofa-Source Yanzu VGS=±10V, VDS=0V

---

---

± 10

uA

Rg

Ƙofar Juriya VDS=0V, VGS=0V, f=1MHz

---

1.2

---

Ω

Qg

Jimlar Cajin Ƙofar (10V) VDS=15V, VGS=10V, ID=20A

---

77

---

nC

Qgs

Cajin Gate-Source

---

8.7

---

Qgd

Cajin Kofa-Drain

---

14

---

Td(na)

Lokacin Jinkirin Kunnawa VDD=15V, VGS=10V, RG=3,

ID=20A

---

10.2

---

ns

Tr

Lokacin Tashi

---

11.7

---

Td (kashe)

Lokacin Jinkirta Kashewa

---

56.4

---

Tf

Lokacin Faduwa

---

16.2

---

Ciss

Input Capacitance VDS=10V, VGS=0V, f=1MHz

---

4307

---

pF

Coss

Fitar Capacitance

---

501

---

Crss

Reverse Canja wurin Capacitance

---

321

---

IS

Tushen Ci gaba na Yanzu1,5 VG=VD= 0V , Ƙarfin Yanzu

---

---

50

A

VSD

Diode Forward Voltage2 VGS=0V, IS=1A, TJ=25

---

---

1.2

V

trr

Juya Lokacin farfadowa IF=20A, di/dt=100A/µs,

TJ=25

---

22

---

nS

Qrr

Juya Cajin Farfadowa

---

72

---

nC


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