WSD3023DN56 N-Ch da P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

samfurori

WSD3023DN56 N-Ch da P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

taƙaitaccen bayanin:


  • Lambar Samfura:Saukewa: WSD3023DN56
  • BVDSS:30V/-30V
  • RDSON:14mΩ/23mΩ
  • ID:14A/-12A
  • Tashoshi:N-Ch da P-Channel
  • Kunshin:DFN5*6-8
  • Samfurin Summery:Wutar lantarki na WSD3023DN56 MOSFET shine 30V/-30V, is14A/-12A na yanzu, juriya shine 14mΩ/23mΩ, tashar N-Ch da P-Channel, kuma kunshin shine DFN5 * 6-8.
  • Aikace-aikace:Jirgin sama mai saukar ungulu, injina, na'urorin lantarki na mota, manyan na'urori.
  • Cikakken Bayani

    Aikace-aikace

    Tags samfurin

    Babban Bayani

    WSD3023DN56 shine mafi girman aikin maɓalli N-ch da P-ch MOSFETs tare da matsananciyar girman ƙwayar sel, wanda ke ba da kyakkyawan RDSON da cajin ƙofar don yawancin aikace-aikacen canza canjin buck. WSD3023DN56 ya cika buƙatun RoHS da Green Samfur 100% EAS garanti tare da cikakken amincin aiki da aka yarda.

    Siffofin

    Advanced high cell density Trench fasaha, Super Low Ƙofar Cajin, Kyakkyawan tasirin CdV/dt, Garanti 100% EAS, Akwai na'urar Green.

    Aikace-aikace

    Babban Mitar-Load Mai Canjin Buck Mai Daidaitawa don MB/NB/UMPC/VGA, Networking DC-DC Power System, CCFL Back-light Inverter,Drones, Motors, Automotive Electronics, manyan na'urori.

    madaidaicin lambar abu

    PJQ5606

    Mahimman sigogi

    Alama Siga Rating Raka'a
    N-Ch P-Ch
    VDS Matsala-Source Voltage 30 -30 V
    VGS Ƙofar-Source Voltage ± 20 ± 20 V
    ID Ci gaba da Ruwa na Yanzu, VGS(NP)=10V,Ta=25℃ 14* -12 A
    Ci gaba da Magudanar Ruwa na yanzu, VGS(NP)=10V,Ta=70℃ 7.6 -9.7 A
    IDP a Pulse Drain Gwaji na Yanzu, VGS(NP)=10V 48 -48 A
    EAS c Avalanche Energy, bugun jini guda ɗaya, L=0.5mH 20 20 mJ
    IAS c Avalanche na yanzu, bugun jini guda ɗaya, L=0.5mH 9 -9 A
    PD Jimlar Ƙarfin Wuta, Ta=25℃ 5.25 5.25 W
    TSTG Ma'ajiya Yanayin Zazzabi - 55 zuwa 175 - 55 zuwa 175
    TJ Rage Yanayin Zazzabi na Junction 175 175
    RqJA b Thermal Resistance-Junction to Ambient,Steady State 60 60 ℃/W
    RqJC Thermal Resistance-Junction to Case,Steady State 6.25 6.25 ℃/W
    Alama Siga Sharuɗɗa Min. Buga Max. Naúrar
    BVDSS Matsala-Source Breakdown Voltage VGS=0V, ID=250uA 30 --- --- V
    RDS(ON) d A tsaye Magudanar Ruwa Kan Juriya VGS=10V, ID=8A --- 14 18.5
    VGS=4.5V, ID=5A --- 17 25
    VGS(th) Ƙofar Ƙofar Wuta VGS=VDS, ID =250uA 1.3 1.8 2.3 V
    IDSS Matsala-Source Leaka Yanzu VDS=20V, VGS=0V, TJ=25℃ --- --- 1 uA
    VDS=20V, VGS=0V, TJ=85℃ --- --- 30
    IGSS Ciwon Kofa-Source Yanzu VGS=±20V, VDS=0V --- --- ± 100 nA
    Rg Ƙofar Juriya VDS=0V, VGS=0V, f=1MHz --- 1.7 3.4 Ω
    Qge Jimlar Cajin Ƙofar VDS=15V, VGS=4.5V, IDS=8A --- 5.2 --- nC
    Qgse Cajin Gate-Source --- 1.0 ---
    Qgde Cajin Kofa-Drain --- 2.8 ---
    Td (na) e Lokacin Jinkirin Kunnawa VDD=15V,RL=15R,IDS=1A,VGEN=10V,RG=6R. --- 6 --- ns
    Tre Lokacin Tashi --- 8.6 ---
    Td (kashe) e Lokacin Jinkirta Kashewa --- 16 ---
    Tfe Lokacin Faduwa --- 3.6 ---
    Cisse Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 545 --- pF
    Cosse Fitar Capacitance --- 95 ---
    Crsse Reverse Canja wurin Capacitance --- 55 ---

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