WSD3023DN56 N-Ch da P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

taƙaitaccen bayanin:

Lambar Samfura:Saukewa: WSD3023DN56

BVDSS:30V/-30V

RDSON:14mΩ/23mΩ

ID:14A/-12A

Tashoshi:N-Ch da P-Channel

Kunshin:DFN5*6-8

Samfurin Summery:Wutar lantarki na WSD3023DN56 MOSFET shine 30V/-30V, is14A/-12A na yanzu, juriya shine 14mΩ/23mΩ, tashar N-Ch da P-Channel, kuma kunshin shine DFN5 * 6-8.

Aikace-aikace:Jirgin sama mai saukar ungulu, injina, na'urorin lantarki na mota, manyan na'urori.

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Babban Bayani

WSD3023DN56 shine mafi girman aikin maɓalli N-ch da P-ch MOSFETs tare da matsananciyar girman ƙwayar sel, wanda ke ba da kyakkyawan RDSON da cajin ƙofar don yawancin aikace-aikacen canza canjin buck. WSD3023DN56 ya cika buƙatun RoHS da Green Samfur 100% EAS garanti tare da cikakken amincin aiki da aka yarda.

Siffofin

Advanced high cell density Trench fasaha, Super Low Ƙofar Cajin, Kyakkyawan tasirin CdV/dt, Garanti 100% EAS, Akwai na'urar Green.

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Babban Mitar-Load Mai Canjin Buck Mai Daidaitawa don MB/NB/UMPC/VGA, Networking DC-DC Power System, CCFL Back-light Inverter,Drones, Motors, Automotive Electronics, manyan na'urori.

madaidaicin lambar abu

PJQ5606

Mahimman sigogi

Alama	Siga	Rating		Raka'a
Alama	Siga	N-Ch	P-Ch	Raka'a
VDS	Matsala-Source Voltage	30	-30	V
VGS	Ƙofar-Source Voltage	± 20	± 20	V
ID	Ci gaba da Ruwa na Yanzu, VGS(NP)=10V,Ta=25℃	14*	-12	A
ID	Ci gaba da Ruwa na Yanzu, VGS(NP)=10V,Ta=70℃	7.6	-9.7	A
IDP a	Pulse Drain Gwaji na Yanzu, VGS(NP)=10V	48	-48	A
EAS c	Avalanche Energy, bugun jini guda ɗaya, L=0.5mH	20	20	mJ
IAS c	Avalanche na yanzu, bugun jini guda ɗaya, L=0.5mH	9	-9	A
PD	Jimlar Ƙarfin Wuta, Ta=25℃	5.25	5.25	W
TSTG	Ma'ajiya Yanayin Zazzabi	- 55 zuwa 175	- 55 zuwa 175	℃
TJ	Tsawon Zazzabi Mai Aiki Junction	175	175	℃
RqJA b	Thermal Resistance-Junction to Ambient,Steady State	60	60	℃/W
RqJC	Thermal Resistance-Junction to Case,Steady State	6.25	6.25	℃/W

Alama	Siga	Sharuɗɗa	Min.	Buga	Max.	Naúrar
BVDSS	Matsala-Source Breakdown Voltage	VGS=0V, ID=250uA	30	---	---	V
RDS(ON) d	A tsaye Magudanar Ruwa Kan Juriya	VGS=10V, ID=8A	---	14	18.5	mΩ
RDS(ON) d	A tsaye Magudanar Ruwa Kan Juriya	VGS=4.5V, ID=5A	---	17	25	mΩ
VGS(th)	Ƙofar Ƙofar Wuta	VGS=VDS, ID =250uA	1.3	1.8	2.3	V
IDSS	Matsala-Source Leaka Yanzu	VDS=20V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Matsala-Source Leaka Yanzu	VDS=20V, VGS=0V, TJ=85℃	---	---	30	uA
IGSS	Ciwon Kofa-Source Yanzu	VGS=±20V, VDS=0V	---	---	± 100	nA
Rg	Ƙofar Juriya	VDS=0V, VGS=0V, f=1MHz	---	1.7	3.4	Ω
Qge	Jimlar Cajin Ƙofar	VDS=15V, VGS=4.5V, IDS=8A	---	5.2	---	nC
Qgse	Cajin Gate-Source		---	1.0	---
Qgde	Cajin Kofa-Drain		---	2.8	---
Td (na) e	Lokacin Jinkirin Kunnawa	VDD=15V,RL=15R,IDS=1A,VGEN=10V,RG=6R.	---	6	---	ns
Tre	Lokacin Tashi		---	8.6	---
Td (kashe) e	Lokacin Jinkirta Kashewa		---	16	---
Tfe	Lokacin Faduwa		---	3.6	---
Cisse	Input Capacitance	VDS=15V, VGS=0V, f=1MHz	---	545	---	pF
Kosse	Fitar Capacitance		---	95	---
Crsse	Reverse Canja wurin Capacitance		---	55	---