WSD2090DN56 N-tashar 20V 80A DFN5*6-8 WINSOK MOSFET

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WSD2090DN56 N-tashar 20V 80A DFN5*6-8 WINSOK MOSFET

taƙaitaccen bayanin:


  • Lambar Samfura:Saukewa: WSD2090DN56
  • BVDSS:20V
  • RDSON:2.8mΩ
  • ID:80A
  • Tashoshi:N-channel
  • Kunshin:DFN5*6-8
  • Samfurin Summery:Wutar lantarki na WSD2090DN56 MOSFET shine 20V, na yanzu shine 80A, juriya shine 2.8mΩ, tashar tashar N-channel, kuma kunshin shine DFN5 * 6-8.
  • Aikace-aikace:Sigari na lantarki, drones, kayan aikin lantarki, bindigogin fascia, PD, ƙananan kayan aikin gida, da sauransu.
  • Cikakken Bayani

    Aikace-aikace

    Tags samfurin

    Babban Bayani

    WSD2090DN56 shine mafi girman aikin maɓalli N-Ch MOSFET tare da matsananciyar yawan ƙwayar sel, wanda ke ba da kyakkyawan RDSON da cajin ƙofar don yawancin aikace-aikacen canza canjin buck. WSD2090DN56 ya cika buƙatun RoHS da Green Samfur 100% EAS garanti tare da cikakken amincin aiki da aka yarda.

    Siffofin

    Advanced high cell density Trench fasaha, Super Low Ƙofar Cajin, Kyakkyawan tasirin CdV / dt, Garanti 100% EAS, Rasu Na'urar Green

    Aikace-aikace

    Canjawa, Tsarin Wuta, Canjin Load, sigari na lantarki, drones, kayan aikin lantarki, bindigogin fascia, PD, ƙananan kayan aikin gida, da sauransu.

    madaidaicin lambar abu

    Saukewa: AON6572

    Mahimman sigogi

    Matsakaicin Matsakaicin Matsakaicin (TC=25℃ sai dai in an lura da shi)

    Alama Siga Max. Raka'a
    VDSS Matsala-Source Voltage 20 V
    VGSS Ƙofar-Source Voltage ± 12 V
    ID@TC=25℃ Ci gaba da Ruwa na Yanzu, VGS @ 10V1 80 A
    ID@TC=100℃ Ci gaba da Ruwa na Yanzu, VGS @ 10V1 59 A
    IDM Rushewar Magudanar Ruwa na Yanzu 1 360 A
    EAS Single Pulsed Avalanche Energy note2 110 mJ
    PD Rashin Wutar Lantarki 81 W
    RJA Resistance thermal, Junction to Case 65 ℃/W
    RθJC Junction Resistance Thermal-Case 1 4 ℃/W
    TJ, TSTG Aiki da Ajiya Zazzabi Range -55 zuwa +175

    Halayen Lantarki (TJ=25 ℃, sai dai in an lura da haka)

    Alama Siga Sharuɗɗa Min Buga Max Raka'a
    BVDSS Matsala-Source Breakdown Voltage VGS=0V, ID=250μA 20 24 --- V
    △BVDSS/△TJ BVDSS Zazzabi Coefficient Magana zuwa 25 ℃, ID=1mA --- 0.018 --- V/ ℃
    VGS(th) Ƙofar Ƙofar Wuta VDS= VGS, ID=250μA 0.50 0.65 1.0 V
    RDS(ON) A tsaye Magudanar Ruwa Kan Juriya VGS=4.5V, ID=30A --- 2.8 4.0
    RDS(ON) A tsaye Magudanar Ruwa Kan Juriya VGS=2.5V, ID=20A --- 4.0 6.0
    IDSS Ƙofar Zero Voltage Magudanar Ruwa na Yanzu VDS=20V,VGS=0V --- --- 1 μA
    IGSS Fitowar Ƙofar Jiki Yanzu VGS=±10V, VDS=0V --- --- ± 100 nA
    Ciss Input Capacitance VDS=10V,VGS=0V,f=1MHZ --- 3200 --- pF
    Coss Fitar Capacitance --- 460 ---
    Crss Reverse Canja wurin Capacitance --- 446 ---
    Qg Jimlar Cajin Ƙofar VGS=4.5V,VDS=10V,ID=30A --- 11.05 --- nC
    Qgs Cajin Gate-Source --- 1.73 ---
    Qgd Cajin Kofa-Drain --- 3.1 ---
    tD(na) Lokacin Jinkirin Kunnawa VGS=4.5V, VDS=10V, ID=30ARGEN=1.8Ω --- 9.7 --- ns
    tr Kunna Lokacin Tashi --- 37 ---
    tD (kashe) Lokacin Jinkirin Kashewa --- 63 ---
    tf Kashe-kashe faɗuwar lokaci --- 52 ---
    VSD Diode Forward Voltage IS=7.6A,VGS=0V --- --- 1.2 V

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