WSD2090DN56 N-tashar 20V 80A DFN5*6-8 WINSOK MOSFET

taƙaitaccen bayanin:

Lambar Samfura:Saukewa: WSD2090DN56

BVDSS:20V

RDSON:2.8mΩ

ID:80A

Tashoshi:N-channel

Kunshin:DFN5*6-8

Samfurin Summery:Wutar lantarki na WSD2090DN56 MOSFET shine 20V, na yanzu shine 80A, juriya shine 2.8mΩ, tashar tashar N-channel, kuma kunshin shine DFN5 * 6-8.

Aikace-aikace:Sigari na lantarki, drones, kayan aikin lantarki, bindigogin fascia, PD, ƙananan kayan aikin gida, da sauransu.

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Cikakken Bayani

Aikace-aikace

Tags samfurin

Babban Bayani

WSD2090DN56 shine mafi girman aikin maɓalli N-Ch MOSFET tare da matsananciyar yawan ƙwayar sel, wanda ke ba da kyakkyawan RDSON da cajin ƙofar don yawancin aikace-aikacen canza canjin buck. WSD2090DN56 ya cika buƙatun RoHS da Green Samfur 100% EAS garanti tare da cikakken amincin aiki da aka yarda.

Siffofin

Advanced high cell density Trench fasaha, Super Low Ƙofar Cajin, Kyakkyawan tasirin CdV / dt, Garanti 100% EAS, Rasu Na'urar Green

Aikace-aikace

Canjawa, Tsarin Wuta, Canjin Load, sigari na lantarki, drones, kayan aikin lantarki, bindigogin fascia, PD, ƙananan kayan aikin gida, da sauransu.

madaidaicin lambar abu

Saukewa: AON6572

Mahimman sigogi

Matsakaicin Matsakaicin Matsakaicin (TC=25℃ sai dai in an lura da shi)

Alama	Siga	Max.	Raka'a
VDSS	Matsala-Source Voltage	20	V
VGSS	Ƙofar-Source Voltage	± 12	V
ID@TC=25℃	Ci gaba da Ruwa na Yanzu, VGS @ 10V1	80	A
ID@TC=100℃	Ci gaba da Ruwa na Yanzu, VGS @ 10V1	59	A
IDM	Rushewar Magudanar Ruwa na Yanzu 1	360	A
EAS	Single Pulsed Avalanche Energy note2	110	mJ
PD	Rashin Wutar Lantarki	81	W
RJA	Resistance thermal, Junction to Case	65	℃/W
RθJC	Junction Resistance Thermal-Case 1	4	℃/W
TJ, TSTG	Yanayin Aiki da Ajiya	-55 zuwa +175	℃

Halayen Lantarki (TJ=25 ℃, sai dai in an lura da haka)

Alama	Siga	Sharuɗɗa	Min	Buga	Max	Raka'a
BVDSS	Matsala-Source Breakdown Voltage	VGS=0V, ID=250μA	20	24	---	V
△BVDSS/△TJ	BVDSS Zazzabi Coefficient	Magana zuwa 25 ℃, ID=1mA	---	0.018	---	V/ ℃
VGS(th)	Ƙofar Ƙofar Wuta	VDS= VGS, ID=250μA	0.50	0.65	1.0	V
RDS(ON)	A tsaye Magudanar Ruwa Kan Juriya	VGS=4.5V, ID=30A	---	2.8	4.0	mΩ
RDS(ON)	A tsaye Magudanar Ruwa Kan Juriya	VGS=2.5V, ID=20A	---	4.0	6.0	mΩ
IDSS	Ƙofar Zero Voltage Magudanar Ruwa na Yanzu	VDS=20V,VGS=0V	---	---	1	μA
IGSS	Fitowar Ƙofar Jiki Yanzu	VGS=±10V, VDS=0V	---	---	± 100	nA
Ciss	Input Capacitance	VDS=10V,VGS=0V,f=1MHZ	---	3200	---	pF
Coss	Fitar Capacitance		---	460	---
Crss	Reverse Canja wurin Capacitance		---	446	---
Qg	Jimlar Cajin Ƙofar	VGS=4.5V,VDS=10V,ID=30A	---	11.05	---	nC
Qgs	Cajin Gate-Source		---	1.73	---
Qgd	Cajin Kofa-Drain		---	3.1	---
tD(na)	Lokacin Jinkirin Kunnawa	VGS=4.5V, VDS=10V, ID=30ARGEN=1.8Ω	---	9.7	---	ns
tr	Kunna Lokacin Tashi		---	37	---
tD (kashe)	Lokacin Jinkirin Kashewa		---	63	---
tf	Kashe-kashe faɗuwar lokaci		---	52	---
VSD	Diode Forward Voltage	IS=7.6A,VGS=0V	---	---	1.2	V