WSD100N15DN56G N-tashar 150V 100A DFN5X6-8 WINSOK MOSFET

Lambar Sashe:Saukewa: WSD100N15DN56G

BVDSS:150V

ID:100A

RDSON:6mΩ

Channel:N-channel

Kunshin:Saukewa: DFN5X6-8

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Cikakken Bayani

Wutar lantarki na WSD100N15DN56G MOSFET shine 150V, na yanzu shine 100A, juriya shine 6mΩ, tashar tashar N-channel, kuma kunshin shine DFN5X6-8.

Ikon likita yana ba da MOSFET, PDs MOSFET, MOSFET drones, sigari MOSFET, manyan kayan MOSFET, da kayan aikin wuta MOSFET.

Alama	Siga	Rating	Raka'a
VDS	Matsala-Source Voltage	150	V
VGS	Ƙofar-Source Voltage	± 20	V
ID	Ci gaba da Ruwa na Yanzu, V_GS@ 10V (T_C= 25 ℃)	100	A
IDM	Magudanar Ruwa a halin yanzu	360	A
EAS	Single Pulse Avalanche Energy	400	mJ
P_D	Jimlar Rashin Wutar Lantarki..._C= 25 ℃)	160	W
RJA	Juriya na thermal, junction-na yanayi	62	℃/W
RθJC	Juriya na thermal, junction-case	0.78	℃/W
TSTG	Ma'ajiya Yanayin Zazzabi	- 55 zuwa 175	℃
T_J	Tsawon Zazzabi Mai Aiki Junction	- 55 zuwa 175	℃

Alama	Siga	Sharuɗɗa	Min.	Buga	Max.	Naúrar
BV_DSS	Matsala-Source Breakdown Voltage	V_GS= 0, I_D= 250 UA	150	---	---	V
RDS(ON)	A tsaye Magudanar Ruwa Kan Juriya²	V_GS= 10V, I_D= 20 A	---	9	12	mΩ
VGS(th)	Ƙofar Ƙofar Wuta	V_GS=V_DS, I_D= 250 UA	2.0	3.0	4.0	V
IDSS	Matsala-Source Leaka Yanzu	V_DS= 100, V_GS= 0, T_J= 25 ℃	---	---	1	uA
IGSS	Ciwon Kofa-Source Yanzu	V_GS= 20V, V_DS= 0V	---	---	± 100	nA
Q_g	Jimlar Cajin Ƙofar	V_DS= 50V, ku_GS= 10V, I_D= 20 A	---	66	---	nC
Q_gs	Cajin Gate-Source		---	26	---
Q_gd	Cajin Kofa-Drain		---	18	---
Td(na)	Lokacin Jinkirin Kunnawa	V_DD= 50V,V_GS= 10V R_G= 2Ω, I_D= 20 A	---	37	---	ns
T_r	Lokacin Tashi		---	98	---
Td (kashe)	Lokacin Jinkirta Kashewa		---	55	---
T_f	Lokacin Faduwa		---	20	---
C_iss	Input Capacitance	V_DS= 30, V_GS= 0V, f=1MHz	---	5450	---	pF
Coss	Fitar Capacitance		---	1730	---
C_rss	Reverse Canja wurin Capacitance		---	195	---