WSD100N06GDN56 N-tashar 60V 100A DFN5X6-8 WINSOK MOSFET

samfurori

WSD100N06GDN56 N-tashar 60V 100A DFN5X6-8 WINSOK MOSFET

taƙaitaccen bayanin:

Lambar Sashe:Saukewa: WSD100N06GDN56

BVDSS:60V

ID:100A

RDSON:3mΩ 

Channel:N-channel

Kunshin:Saukewa: DFN5X6-8


Cikakken Bayani

Aikace-aikace

Tags samfurin

Bayanin samfurin WINSOK MOSFET

Wutar lantarki na WSD100N06GDN56 MOSFET shine 60V, na yanzu shine 100A, juriya shine 3mΩ, tashar tashar N-channel, kuma kunshin shine DFN5X6-8.

Yankunan aikace-aikacen WINSOK MOSFET

Ikon likita yana ba da MOSFET, PDs MOSFET, MOSFET drones, sigari MOSFET, manyan kayan MOSFET, da kayan aikin wuta MOSFET.

WINSOK MOSFET yayi daidai da sauran lambobin kayan alama

AOS MOSFET AON6264C, AON6264E, AON6266E, AONS6662.STMicroelectronics MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semiconductor MOSFET PDC692X.

MOSFET sigogi

Alama

Siga

Rating

Raka'a

VDS

Matsala-Source Voltage

60

V

VGS

Ƙofar-Source Voltage

± 20

V

ID1,6

Ci gaba da Magudanar Ruwa a halin yanzu TC=25°C

100

A

TC=100°C

65

IDM2

Magudanar Ruwa a halin yanzu TC=25°C

240

A

PD

Matsakaicin Rushewar Wuta TC=25°C

83

W

TC=100°C

50

IAS

Avalanche Yanzu, bugun jini guda ɗaya

45

A

EAS3

Single Pulse Avalanche Energy

101

mJ

TJ

Matsakaicin Yanayin Junction

150

TSTG

Ma'ajiya Yanayin Zazzabi

- 55 zuwa 150

RJA1

Junction Resistance Thermal zuwa yanayi

Jiha Tsaye

55

/W

RθJC1

Juriya na thermal-Junction zuwa Case

Jiha Tsaye

1.5

/W

 

Alama

Siga

Sharuɗɗa

Min.

Buga

Max.

Naúrar

A tsaye        

V (BR) DSS

Matsala-Source Breakdown Voltage

VGS = 0V, ID = 250μA

60    

V

IDSS

Ƙofar Zero Voltage Magudanar Ruwa na Yanzu

VDS = 48 V, VGS = 0V

   

1

µA

 

TJ=85°C

   

30

IGSS

Leakawar Ƙofar Yanzu

VGS = ± 20V, VDS = 0V

    ± 100

nA

Akan Halaye        

VGS (TH)

Ƙofar Ƙofar Wuta

VGS = VDS, IDS = 250µA

1.2

1.8

2.5

V

RDS(na)2

Magudanar ruwa-Source Juriya kan-jihar

VGS = 10V, ID = 20A

 

3.0

3.6

VGS = 4.5V, ID = 15A

 

4.4

5.4

Canjawa        

Qg

Jimlar Cajin Ƙofar

VDS=30V

VGS=10V

ID=20A

  58  

nC

Qgs

Cajin Kofa-Sour   16  

nC

Qgd

Cajin Kofa-Drain  

4.0

 

nC

td (na)

Lokacin Jinkirin Kunnawa

VGEN=10V

VDD=30V

ID=20A

RG=Ω

  18  

ns

tr

Kunna Lokacin Tashi  

8

 

ns

td (kashe)

Lokacin Jinkirin Kashewa   50  

ns

tf

Kashe Fall Time   11  

ns

Rg

Gat juriya

VGS=0V, VDS=0V, f=1MHz

 

0.7

 

Ω

Mai ƙarfi        

Ciss

A cikin Capacitance

VGS=0V

VDS=30V f=1MHz

 

3458

 

pF

Coss

A waje Capacitance   1522  

pF

Crss

Reverse Canja wurin Capacitance   22  

pF

Halayen Diode-Source Diode da Matsakaicin Matsakaicin        

IS1,5

Tushen Ci gaba na Yanzu

VG=VD=0V , Force Current

   

55

A

ISM

Tushen Pulsed Current3     240

A

VSD2

Diode Forward Voltage

ISD = 1A, VGS=0V

 

0.8

1.3

V

trr

Juya Lokacin farfadowa

ISD= 20 A, dlSD/dt=100A/µs

  27  

ns

Qrr

Juya Cajin Farfadowa   33  

nC


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