Karfe-oxide-semiconductor filin-tasirin transistor (MOSFET, MOS-FET, ko MOS FET) wani nau'in transistor ne mai tasirin filin (FET), wanda aka fi ƙirƙira ta hanyar iskar oxygen da aka sarrafa.Yana da ƙofar da aka keɓe, ƙarfin wutar lantarki wanda ke ƙayyade ƙimar na'urar.
Babban fasalinsa shi ne cewa akwai siliki mai rufe fuska na silicon dioxide tsakanin ƙofar karfe da tashar, don haka yana da juriya mai girma (har zuwa 1015Ω).Hakanan an raba shi zuwa bututun N-channel da bututun tashar P.Yawancin lokaci ana haɗa substrate (substrate) da tushen S tare.
Dangane da hanyoyin gudanarwa daban-daban, MOSFETs an raba su zuwa nau'in haɓakawa da nau'in ragewa.
Abin da ake kira nau'in haɓakawa yana nufin: lokacin da VGS=0, bututun yana cikin yanayin yankewa.Bayan ƙara daidai VGS, yawancin masu ɗaukar kaya suna jan hankalin ƙofar, don haka "inganta" masu ɗaukar kaya a wannan yanki da kuma samar da tashar sarrafawa..
Yanayin ragewa yana nufin lokacin da VGS=0, an kafa tasha.Lokacin da aka ƙara daidai VGS, yawancin masu ɗaukar kaya zasu iya fita daga tashar, don haka "rasa" masu ɗaukar kaya kuma suna kashe bututu.
Gane dalili: Juriya na shigarwar JFET ya fi 100MΩ, kuma transconductance yana da girma sosai, lokacin da aka jagoranci ƙofar, filin maganadisu na cikin gida yana da sauƙi don gano siginar bayanan ƙarfin aiki akan ƙofar, ta yadda bututun ya kula da su. zama har zuwa, ko oyan zama on-off.Idan an ƙara ƙarfin shigar da jiki nan da nan zuwa ƙofar, saboda kutsewar maɓalli na lantarki yana da ƙarfi, yanayin da ke sama zai zama mafi mahimmanci.Idan allurar mita ta karkata da ƙarfi zuwa hagu, yana nufin cewa bututun yana da ƙarfi, mai tsayayyar tushen magudanar ruwa RDS yana faɗaɗa, kuma adadin magudanar ruwa na yanzu yana rage IDS.Akasin haka, allurar mita tana jujjuyawa da ƙarfi zuwa dama, yana nuna cewa bututun yana ƙoƙarin kashewa, RDS yana ƙasa, kuma IDS ya hau.Koyaya, ainihin hanyar da allurar mita ke karkatar da ita yakamata ta dogara da ingantattun sanduna mara kyau da mara kyau na ƙarfin lantarki da aka jawo (tabbatacciyar ƙarfin wutar lantarki mai aiki ko jujjuya wutar lantarki) da tsakiyar wurin aiki na bututun.
WINSOK DFN3x3 MOSFET
Ɗaukar tashar N a matsayin misali, ana yin ta akan nau'in siliki na nau'in P tare da yankuna biyu masu yaduwa na N+ da magudanar ruwa na N+, sa'an nan kuma ana fitar da tushen lantarki S da magudanar ruwa D bi da bi.Madogararsa da substrate an haɗa su cikin ciki, kuma koyaushe suna kiyaye yuwuwar iri ɗaya.Lokacin da aka haɗa magudanar zuwa madaidaicin tashar wutar lantarki kuma an haɗa tushen zuwa madaidaicin tashar wutar lantarki da VGS=0, tashar tashar yanzu (watau drain current) ID=0.Yayin da VGS ke ƙaruwa a hankali, yana jan hankalin wutar lantarki mai kyau ta ƙofar, ƙananan masu cajin marasa ƙarfi suna jawo tsakanin yankuna biyu masu yaduwa, suna kafa tashar nau'in N daga magudanar ruwa zuwa tushe.Lokacin da VGS ya fi ƙarfin kunna wutar lantarki VTN na bututu (gaba ɗaya game da +2V), bututun N-channel ya fara gudanarwa, yana ƙirƙirar ID na yanzu.
VMOSFET (VMOSFET), cikakken sunanta shine V-groove MOSFET.Sabuwar haɓaka ce mai inganci, na'urar sauya wuta bayan MOSFET.Ba wai kawai ya gaji babban shigar da MOSFET (≥108W) ba, har ma da ƙaramin tuƙi (kimanin 0.1μA).Hakanan yana da kyawawan halaye irin su ƙarfin juriya mai ƙarfi (har zuwa 1200V), babban aiki na yanzu (1.5A ~ 100A), babban ƙarfin fitarwa (1 ~ 250W), madaidaiciyar madaidaiciyar madaidaiciya, da saurin sauyawa mai sauri.Daidai saboda ya haɗu da fa'idodin injin bututu da transistor wuta, ana amfani da shi sosai a cikin amplifiers na ƙarfin lantarki (ƙarfin ƙarfin lantarki zai iya kaiwa dubbai), na'urori masu ƙarfi, sauya kayan wuta da inverters.
Kamar yadda kowa ya sani, ƙofar, tushe da magudanar ruwa na MOSFET na gargajiya suna kusan akan jirgin sama ɗaya kwance akan guntu, kuma halin yanzu yana gudana ta hanyar kwance.Bututun VMOS ya bambanta.Yana da manyan siffofi guda biyu: na farko, ƙofar ƙarfe ta ɗauki tsarin tsagi mai siffar V;na biyu, yana da karkacewa a tsaye.Tunda an zana magudanar daga bayan guntu, ID ɗin baya gudana a kwance tare da guntu, amma yana farawa daga yankin N + mai ƙarfi (source S) kuma yana gudana cikin yankin N-drift mai sauƙi ta hanyar tashar P.A ƙarshe, yana kaiwa ƙasa a tsaye don magudanar ruwa D. Saboda magudanar ruwa yana ƙaruwa, manyan igiyoyin ruwa na iya wucewa.Tunda akwai rufin siliki mai hana ruwa tsakanin ƙofar da guntu, har yanzu kofa ce mai rufi MOSFET.
Amfanin amfani:
MOSFET sinadari ne mai sarrafa wutar lantarki, yayin da transistor abu ne mai sarrafa na yanzu.
Ya kamata a yi amfani da MOSFETs lokacin da aka ƙyale ƙananan adadin halin yanzu da za a zana daga tushen siginar;Ya kamata a yi amfani da transistor lokacin da ƙarfin siginar ya yi ƙasa kuma an ba da izinin zana ƙarin halin yanzu daga tushen siginar.MOSFET na amfani da mafiya yawa dillalai don gudanar da wutar lantarki, don haka ana kiranta da na'urar unipolar, yayin da transistor ke amfani da duka masu rinjaye da kuma tsirarun masu ɗaukar wuta don gudanar da wutar lantarki, don haka ana kiranta na'urar bipolar.
Ana iya amfani da tushen da magudanar ruwa na wasu MOSFETs, kuma wutar lantarki na ƙofa na iya zama tabbatacce ko mara kyau, yana sa su fi sauƙi fiye da triodes.
MOSFET na iya aiki a ƙarƙashin ƙananan yanayin halin yanzu da ƙarancin ƙarfin lantarki, kuma tsarin masana'anta na iya haɗa MOSFET da yawa cikin sauƙi akan guntun silicon.Saboda haka, MOSFET an yi amfani da shi sosai a cikin manyan da'irori masu haɗaka.
Olueky SOT-23N MOSFET
Halayen aikace-aikacen daban-daban na MOSFET da transistor
1. Tushen s, ƙofar g, da magudanar d na MOSFET sun yi daidai da emitter e, tushe b, da mai tara c na transistor bi da bi.Ayyukansu iri ɗaya ne.
2. MOSFET na'ura ce mai sarrafa wutar lantarki, iD na vGS ne ke sarrafa shi, kuma ƙaramar ƙarfin sa gabaɗaya karama ce, don haka ƙarfin haɓakawa na MOSFET ba shi da kyau;transistor na'ura ce mai sarrafawa a halin yanzu, kuma iC ana sarrafa ta iB (ko iE).
3. Ƙofar MOSFET tana kusan babu halin yanzu (ig»0);yayin da tushen transistor koyaushe yana zana wani takamaiman lokacin lokacin transistor yana aiki.Saboda haka, juriyar shigar da ƙofar MOSFET ya fi ƙarfin shigarwar transistor.
4. MOSFET ya ƙunshi nau'ikan jigilar kaya masu yawa waɗanda ke cikin gudanarwa;transistor suna da masu ɗaukar kaya guda biyu, masu ɗaukar kaya da yawa da marasa rinjaye, waɗanda ke da hannu wajen gudanarwa.Matsalolin marasa rinjaye suna tasiri sosai da abubuwa kamar zafin jiki da radiation.Saboda haka, MOSFETs suna da mafi kyawun yanayin zafin jiki da ƙarfin juriya na radiation fiye da transistor.Ya kamata a yi amfani da MOSFET inda yanayin muhalli (zazzabi, da sauransu) ya bambanta sosai.
5. Lokacin da aka haɗa tushen ƙarfe da substrate na MOSFET tare, tushen da magudanar ruwa za a iya amfani da su tare, kuma halayen suna canzawa kaɗan;yayin da aka yi amfani da mai tarawa da emitter na triode, halayen sun bambanta sosai.Za a rage ƙimar β da yawa.
6. Amo coefficient na MOSFET kadan ne.Yakamata a yi amfani da MOSFET gwargwadon yiwuwa a matakin shigarwa na ƙananan ƙararrakin ƙararrawa da da'irori waɗanda ke buƙatar babban sigina-zuwa amo.
7. Dukansu MOSFET da transistor na iya samar da nau'ikan amplifier daban-daban da masu juyawa, amma tsohon yana da tsarin masana'anta mai sauƙi kuma yana da fa'idodin ƙarancin wutar lantarki, kwanciyar hankali mai kyau, da kewayon wutar lantarki mai fa'ida.Saboda haka, ana amfani da shi sosai a cikin manyan da'irori masu girma da yawa.
8. transistor yana da babban juriya, yayin da MOSFET yana da ƙaramin juriya, 'yan ɗari kawai mΩ.A cikin na'urorin lantarki na yanzu, MOSFETs gabaɗaya ana amfani da su azaman masu sauyawa, kuma ingancinsu yana da girma.
WINSOK SOT-323 encapsulation MOSFET
MOSFET vs. Bipolar Transistor
MOSFET na'ura ce da ke sarrafa wutar lantarki, kuma ƙofar ba ta ɗaukar halin yanzu, yayin da transistor na'ura ce mai sarrafawa a halin yanzu, kuma dole ne tushe ya ɗauki takamaiman halin yanzu.Sabili da haka, lokacin da ƙimar halin yanzu na tushen siginar yayi ƙanƙanta, ya kamata a yi amfani da MOSFET.
MOSFET jagora ce mai ɗaukar kaya da yawa, yayin da duka masu ɗaukar transistor ke shiga cikin gudanarwa.Tunda yawan masu ɗaukar marasa rinjaye yana da matukar kula da yanayin waje kamar zafin jiki da radiation, MOSFET ya fi dacewa da yanayin da yanayin ke canzawa sosai.
Baya ga yin amfani da su azaman na'urori masu haɓakawa da masu sauyawa masu iya sarrafawa kamar transistor, MOSFETs kuma ana iya amfani da su azaman masu jujjuya madaidaiciyar madaidaiciya mai sarrafa wutar lantarki.
Tushen da magudanar ruwa na MOSFET suna da ma'auni a cikin tsari kuma ana iya amfani da su tare.Wutar wutar lantarki ta tushen ƙofar MOSFET na iya zama tabbatacce ko mara kyau.Saboda haka, amfani da MOSFET ya fi sauƙi fiye da transistor.
Lokacin aikawa: Oktoba-13-2023
